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IRF3205 Datasheet(PDF) 1 Page - Nell Semiconductor Co., Ltd

Part No. IRF3205
Description  N-Channel Power MOSFET
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Maker  NELLSEMI [Nell Semiconductor Co., Ltd]
Homepage  http://www.nellsemi.com
Logo NELLSEMI - Nell Semiconductor Co., Ltd

IRF3205 Datasheet(HTML) 1 Page - Nell Semiconductor Co., Ltd

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SEMICONDUCTOR
RoHS
RoHS
N-Channel Power MOSFET
Nell High Power Products
IRF3205 Series
(110A, 55Volts)
They are designed as an extremely efficient
and reliable device for use in a wide variety of
applications. These transistors can be operated
directly from integrated circuits.
The Nell IRF3205 is a three-terminal silicon
device with current conduction capability
of 110A, fast switching speed, low on-state
resistance, breakdown voltage rating of 55V,
and max. threshold voltage of 4 volts.
DESCRIPTION
Low reverse transfer capacitance
(C
= 210pF typical)
RSS
R
= 0.010Ω @ V
= 10V
DS(ON)
GS
Ultra low gate charge(150nC max.)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
175°C operation temperature
FEATURES
PRODUCT SUMMARY
I (A)
D
110
V
(V)
DSS
75
0.010 @ V
= 10V
GS
150
R
(Ω)
DS(ON)
Q (nC) max.
G
D (Drain)
G
(Gate)
S (Source)
TO-220AB
(IRF3205A)
D
G
D
S
2
TO-263(D PAK)
(IRF3205H)
UNIT
V /ns
V
W /°C
A
mJ
ºC
-55 to 175
VALUE
110
80
55
±20
390
55
200
5
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)
C
T =25°C to 150°C
J
TEST CONDITIONS
R
=20KΩ
GS
V
=10V,
GS
T =25°C
C
V
=10V,
GS
T =100°C
C
Operation junction temperature
Storage temperature
Peak diode recovery dv/dt(Note 3)
PARAMETER
Pulsed Drain current(Note 2)
Continuous Drain Current
(Note 1)
Total power dissipation
Gate to Source voltage
Drain to Gate voltage
Drain to Source voltage
SYMBOL
VDGR
VDSS
dv/dt
VGS
IDM
TSTG
PD
ID
TJ
TL
.
.
lbf in (N m)
300
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
-55 to 175
Note:
1.Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
10 (1.1)
1.6mm from case
IAR
Avalanche current(Note 2)
62
T =25°C
C
2
.Repetitive rating: pulse width limited by junction temperature.
20
Repetitive avalanche energy(Note
2)
EAR
3
.I
≤ 62A, di/dt ≤ 207A/µs, V
V
, T
175°C.
SD
DD
(BR)DSS
J
1.3
Derating factor above 25
°C
G
D
S
D
www.nellsemi.com
Page 1 of 7
W
I (A), Package Limited
D
55


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