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5N70ZG-TF2-T Datasheet(PDF) 4 Page - Unisonic Technologies |
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5N70ZG-TF2-T Datasheet(HTML) 4 Page - Unisonic Technologies |
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4 / 7 page  5N70Z Power MOSFE UNISONICTECHNOLOGIESCO.,LTD 4 of 7 www.unisonic.com.tw QW-R502-911. D ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 700 V Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ Reference to 25°C, ID=250µA 0.18 V/°C Drain-Source Leakage Current IDSS VDS=700V, VGS=0V 1 µA VDS=560V, VGS=0V, TC=125°C 10 µA Gate-Source Leakage Current Forward IGSS VGS=+20V, VDS=0V +10 µA Reverse VGS=-20V, VDS=0V -10 µA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2 4 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=2.5A 2.15 2.5 Ω DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz 420 625 pF Output Capacitance COSS 55 65 pF Reverse Transfer Capacitance CRSS 9 12 pF SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) VDD=30V, ID=0.5A, RG=25Ω (Note 1, 2) 40 60 ns Rise Time tR 42 60 ns Turn-OFF Delay Time tD(OFF) 135 155 ns Fall-Time tF 48 60 ns Total Gate Charge QG VGS=5V, VDS=160V, ID=4.5A (Note 1, 2) 70 90 nC Gate to Source Charge QGS 20 nC Gate to Drain Charge QGD 15 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 5 A Maximum Body-Diode Pulsed Current ISM 20 A Drain-Source Diode Forward Voltage VSD IS=5A, VGS=0V 1.4 V Body Diode Reverse Recovery Time trr IS=4.5A, VGS=0V, dIF/dt=100A/µs (Note 1) 95 ns Body Diode Reverse Recovery Charge QRR 0.3 µC Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2% 2. Essentially independent of operating temperature |
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