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5N70K Datasheet(PDF) 3 Page - Unisonic Technologies

Part No. 5N70K
Description  5A, 700V N-CHANNEL POWER MOSFET
Download  6 Pages
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Maker  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
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5N70K Datasheet(HTML) 3 Page - Unisonic Technologies

   
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5N70K
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 6
www.unisonic.com.tw
QW-R502-887.a
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0V, ID = 250μA
700
V
Drain-Source Leakage Current
IDSS
VDS =700V, VGS = 0V
1
μA
Gate-Source Leakage Current
Forward
IGSS
VGS =30V, VDS = 0V
100
nA
Reverse
VGS =-30V, VDS = 0V
-100
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID =250μA, Referenced to 25℃
0.6
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID = 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS =10V, ID = 2.5A
2.0
2.4
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
f = 1.0MHz
515 670
pF
Output Capacitance
COSS
55
72
pF
Reverse Transfer Capacitance
CRSS
6.5
8.5
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
VDD = 325V, ID =5A,
RG = 25Ω (Note 1, 2)
10
30
ns
Turn-On Rise Time
tR
60
90
ns
Turn-Off Delay Time
tD(OFF)
38
85
ns
Turn-Off Fall Time
tF
50
100
ns
Total Gate Charge
QG
VDS = 520 V, ID = 5A,
VGS = 10 V (Note 1, 2)
15
19
nC
Gate-Source Charge
QGS
2.5
nC
Gate-Drain Charge
QGD
6.6
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 5A
1.4
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
5
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
20
A
Reverse Recovery Time
trr
VGS = 0V, IS =5A,
dIF / dt = 100 A/μs (Note 1)
300
ns
Reverse Recovery Charge
QRR
2.2
μC
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature


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