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5N50KL-TF3-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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5N50KL-TF3-T Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 6 page 5N50K Power MOSFET www.unisonic.com.tw 3 of 6 Copyright © 2010 Unisonic Technologies Co., Ltd VER.a ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 500 V Breakdown Voltage Temperature Coefficient BV △ DSS/T △ J Reference to 25°C, ID=250µA 0.5 V/°C Drain-Source Leakage Current IDSS VDS=500V, VGS=0V 1 µA VDS=400V, TC=125°C 10 Gate- Source Leakage Current Forward IGSS VGS=30V, VDS=0V 100 nA Reverse VGS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=2.5A 1.2 1.4 Ω DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz 480 625 pF Output Capacitance COSS 80 105 pF Reverse Transfer Capacitance CRSS 15 20 pF SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=400V, ID=5A (Note 1, 2) 18 24 nC Gate to Source Charge QGS 2.2 nC Gate to Drain Charge QGD 9.7 nC Turn-ON Delay Time tD(ON) VDD=250V, ID=5A, RG=25Ω (Note 1, 2) 12 35 ns Rise Time tR 46 100 ns Turn-OFF Delay Time tD(OFF) 50 110 ns Fall-Time tF 48 105 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current IS 5 A Maximum Pulsed Drain-Source Diode Forward Current ISM 20 A Drain-Source Diode Forward Voltage VSD IS=5A, VGS=0V 1.4 V Reverse Recovery Time trr IS=5A, VGS=0V, dIF/dt=100A/µs (Note 1) 263 ns Reverse Recovery Charge QRR 1.9 µC Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature |
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