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3N90Z Datasheet(PDF) 3 Page - Unisonic Technologies |
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3N90Z Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 6 page 3N90Z Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-913.a ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 900 V Drain-Source Leakage Current IDSS VDS=900V, VGS=0V 1 μA Gate-Source Leakage Current IGSS VGS=±20V, VDS=0V ±10 μA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 3 3.75 4.5 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=1.5A 4.1 4.8 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1MHz 590 pF Output Capacitance COSS 63 pF Reverse Transfer Capacitance CRSS 13 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD=450V, ID=1.5 A, RG=4.7Ω VGS=10V 18 ns Turn-On Rise Time tR 7 ns Turn-Off Delay Time tD(OFF) VDD=720V, ID=1.5 A, RG=4.7Ω VGS=10V 45 ns Turn-Off Fall Time tF 18 ns Total Gate Charge QG VDD=720V, ID=3A, VGS=10V 22.7 nC Gate-Source Charge QGS 4.2 nC Gate-Drain Charge QDD 12 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage(Note 1) VSD ISD=3A ,VGS=0V 1.6 V Source-Drain Current ISD 3 A Source-Drain Current (Pulsed) ISDM 12 A Reverse Recovery Current IRRM ISD=3A, di/dt=100A/μs, VDD=100V, TJ=25°C 8.7 A Body Diode Reverse Recovery Time tRR 510 ns Body Diode Reverse Recovery Charge QRR 2.2 nC Notes: 1. Pulse width=300μs, Duty cycle≦1.5% 2. COSS(EQ) is defined asa constant equivalent capacitance giving the same charging time as COSS when VDS increases from 0to 80% VDSS. |
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