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3N80Z Datasheet(PDF) 3 Page - Unisonic Technologies |
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3N80Z Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 6 page 3N80Z Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-912.a ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 800 V Drain-Source Leakage Current IDSS VDS=800V, VGS=0V 1 μA Gate-Source Leakage Current IGSS VGS=±20V, VDS=0V ±10 μA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 3 3.75 4.5 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=1.5A 3.2 4.2 Ω Forward Transconductance (Note 1) gFS VDS=15V, ID=1.5A 2.1 S DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1MHz 485 pF Output Capacitance COSS 57 pF Reverse Transfer Capacitance CRSS 11 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD=400V, ID=3 A, RG=4.7Ω VGS=10V 17 ns Turn-On Rise Time tR 27 ns Turn-Off Delay Time tD(OFF) 36 ns Turn-Off Fall Time tF 40 ns Total Gate Charge QG VDD=640V, ID=3A, VGS=10V 19 nC Gate-Source Charge QGS 3.2 nC Gate-Drain Charge QDD 10.8 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage(Note 1) VSD ISD=3A ,VGS=0V 1.6 V Source-Drain Current ISD 2.5 A Source-Drain Current (Pulsed) ISDM 10 A Reverse Recovery Current IRRM ISD=3A, di/dt=100A/μs, VDD=50V, TJ=25°C 8.4 A Body Diode Reverse Recovery Time trr 384 ns Body Diode Reverse Recovery Charge QRR 1600 nC Notes: 1. Pulse width=300μs, Duty cycle ≤1.5% 2. COSS(EQ) is defined as constant equivalent capacitance giving the same charging time as COSS when VDS increases from 0to 80% VDSS. |
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