PBSS4041SPN datasheet(7/20 Pages) NXP

Part #	PBSS4041SPN

Description	60 V NPN/PNP low VCEsat (BISS) transistor

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Manufacturer	NXP [NXP Semiconductors]

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PBSS4041SPN

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Product data sheet

Rev. 2 — 20 October 2010

7 of 20

NXP Semiconductors

PBSS4041SPN

60 V NPN/PNP low VCEsat (BISS) transistor

7.

Characteristics

Table 8.

Characteristics

Tamb =25 °C unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

TR1; NPN low VCEsat transistor

ICBO

collector-base

cut-off current

VCB =60V; IE = 0 A

-

100

nA

VCB =60V; IE =0A;

Tj =150 °C

--50

μA

ICES

collector-emitter

cut-off current

VCE =48V; VBE = 0 V

-

100

nA

IEBO

emitter-base

cut-off current

VEB =5 V; IC = 0 A

-

100

nA

hFE

DC current gain

VCE =2V

[1]

IC = 500 mA

300

500

-

IC = 1 A

300

500

-

IC = 2 A

250

450

-

IC = 4 A

150

250

-

IC =6 A

75

150

-

VCEsat

collector-emitter

saturation voltage

[1]

IC =1 A; IB =50mA

-

40

60

mV

IC =1 A; IB = 10 mA

-

65

100

mV

IC =2 A; IB = 40 mA

-

85

145

mV

IC =4 A; IB = 200 mA

-

125

190

mV

IC =4 A; IB = 40 mA

-

220

320

mV

IC =7 A; IB = 350 mA

-

230

350

mV

RCEsat

collector-emitter

saturation resistance

IC =4 A; IB =200 mA

[1] -32

48

m

Ω

VBEsat

base-emitter

saturation voltage

[1]

IC =1 A; IB =100 mA

-

0.86

1

V

IC =4 A; IB =400 mA

-

1.05

1.2

V

VBEon

base-emitter

turn-on voltage

VCE =2V; IC =2A

[1] -0.75

0.85

V

td

delay time

VCC =12.5V; IC =1A;

IBon =0.05 A; IBoff = −0.05 A

-35

-

ns

tr

rise time

-

65

-

ns

ton

turn-on time

-

100

-

ns

ts

storage time

-

1050

-

ns

tf

fall time

-

220

-

ns

toff

turn-off time

-

1270

-

ns

fT

transition frequency

VCE =10V; IC =100 mA;

f=100MHz

-130

-

MHz

Cc

collector capacitance VCB =10V; IE =ie =0 A;

f=1MHz

-35

-

pF

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