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PBSS4041SPN Datasheet(PDF) 7 Page - NXP Semiconductors |
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PBSS4041SPN Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 20 page PBSS4041SPN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 2 — 20 October 2010 7 of 20 NXP Semiconductors PBSS4041SPN 60 V NPN/PNP low VCEsat (BISS) transistor 7. Characteristics Table 8. Characteristics Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit TR1; NPN low VCEsat transistor ICBO collector-base cut-off current VCB =60V; IE = 0 A - - 100 nA VCB =60V; IE =0A; Tj =150 °C --50 μA ICES collector-emitter cut-off current VCE =48V; VBE = 0 V - - 100 nA IEBO emitter-base cut-off current VEB =5 V; IC = 0 A - - 100 nA hFE DC current gain VCE =2V [1] IC = 500 mA 300 500 - IC = 1 A 300 500 - IC = 2 A 250 450 - IC = 4 A 150 250 - IC =6 A 75 150 - VCEsat collector-emitter saturation voltage [1] IC =1 A; IB =50mA - 40 60 mV IC =1 A; IB = 10 mA - 65 100 mV IC =2 A; IB = 40 mA - 85 145 mV IC =4 A; IB = 200 mA - 125 190 mV IC =4 A; IB = 40 mA - 220 320 mV IC =7 A; IB = 350 mA - 230 350 mV RCEsat collector-emitter saturation resistance IC =4 A; IB =200 mA [1] -32 48 m Ω VBEsat base-emitter saturation voltage [1] IC =1 A; IB =100 mA - 0.86 1 V IC =4 A; IB =400 mA - 1.05 1.2 V VBEon base-emitter turn-on voltage VCE =2V; IC =2A [1] -0.75 0.85 V td delay time VCC =12.5V; IC =1A; IBon =0.05 A; IBoff = −0.05 A -35 - ns tr rise time - 65 - ns ton turn-on time - 100 - ns ts storage time - 1050 - ns tf fall time - 220 - ns toff turn-off time - 1270 - ns fT transition frequency VCE =10V; IC =100 mA; f=100MHz -130 - MHz Cc collector capacitance VCB =10V; IE =ie =0 A; f=1MHz -35 - pF |
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