SEMICONDUCTOR

RoHS

RoHS

Nell High Power Products

5N65 Series

Note:

UNIT

Min.

160

2.3

62.5

1.25

THERMAL RESISTANCE

TO-251/ TO-252

TO-220AB

TO-251/TO-252

TO-220F

PARAMETER

Thermal resistance, junction to ambient

Thermal resistance, junction to case

SYMBOL

Typ.

Max.

ºC/W

2

= 50V, L = 16.8mH, R

= 25Ω, starting T =25°C.

AS

DD

GS

J

3

, starting T =25°C.

SD

DD

(BR)DSS

J

62.5

TO-220AB

3.5

TO-220F

UNIT

V /ns

V

W

A

mJ

ºC

-55 to 150

VALUE

5

3.1

650

±30

210

20

650

54

100

4.5

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)

C

T =25°C to 150°C

J

TEST CONDITIONS

R

=20KΩ

GS

T =25°C

C

T =100°C

C

Operation junction temperature

Single pulse avalanche energy (Note

Storage temperature

Peak diode recovery dv/dt(Note 3)

PARAMETER

Pulsed Drain current(Note 1)

Continous Drain Current

Total power dissipation

Gate to Source voltage

Drain to Gate voltage

Drain to Source voltage

SYMBOL

dv/dt

.

.

lbf in (N m)

300

Maximum soldering temperature, for 10 seconds

Mounting torque, #6-32 or M3 screw

-55 to 150

TO-251/ TO-252

TO-220AB

10 (1.1)

1.6mm from case

Avalanche current(Note

5

I

=5A, L = 16.8mH

AS

T =25°C

C

10

Repetitive avalanche energy(Note

I

=5A, R

=50Ω, V

=10V

AR

GS

GS

TO-220F

36

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