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IRF640 Datasheet(PDF) 1 Page - Nell Semiconductor Co., Ltd

Part No. IRF640
Description  N-Channel Power MOSFET
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Maker  NELLSEMI [Nell Semiconductor Co., Ltd]
Homepage  http://www.nellsemi.com
Logo NELLSEMI - Nell Semiconductor Co., Ltd

IRF640 Datasheet(HTML) 1 Page - Nell Semiconductor Co., Ltd

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SEMICONDUCTOR
RoHS
RoHS
N-Channel Power MOSFET
Nell High Power Products
IRF640 Series
(18A, 200Volts)
The Nell IRF640 are N-channel enhancement mode
silicon gate power field effect transistors.
They are designed, tested and guaranteed to withstand
level of energy in breakdown avalanche made of operation.
DESCRIPTION
Low reverse transfer capacitance
(C
= 91pF typical)
RSS
R
= 0.180Ω @ V
= 10V
DS(ON)
GS
Ultra low gate charge(63nC max.)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
FEATURES
PRODUCT SUMMARY
I (A)
D
18
V
(V)
DSS
200
0.180 @ V
= 10V
GS
63
R
(Ω)
DS(ON)
Q (nC) max.
G
D (Drain)
G
(Gate)
S (Source)
TO-220AB
(IRF640A)
D
G
D
S
2
TO-263(D PAK)
(IRF640H)
UNIT
V /ns
V
W /°C
A
mJ
ºC
-55 to 150
VALUE
18
11
200
±20
72
200
125
5
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)
C
T =25°C to 150°C
J
TEST CONDITIONS
R
=20KΩ
GS
V
=10V,
GS
T =25°C
C
V
=10V,
GS
T =100°C
C
Operation junction temperature
Storage temperature
Peak diode recovery dv/dt(Note 3)
PARAMETER
Pulsed Drain current (Note 1)
Continuous Drain Current
Total power dissipation
Gate to Source voltage
Drain to Gate voltage
Drain to Source voltage(Note 1)
SYMBOL
VDGR
VDSS
dv/dt
VGS
IDM
TSTG
PD
ID
TJ
TL
.
.
lbf in (N m)
300
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
-55 to 150
10 (1.1)
1.6mm from case
IAR
Repetitive avalanche current (Note 1)
18
T =25°C
C
13
Repetitive avalanche energy(Note 1)
EAR
0.98
Derating factor above 25
°C
G
D
S
D
www.nellsemi.com
Page 1 of 7
They are designed as an extremely efficient and
reliable device for use in a wide variety of applications
such as switching regulators, convertors, motor drivers
and drivers for high power bipolar switching transistors
requiring high speed and low gate drive power.
These
can
be operated
transistors
directly from
integrated circuits.
EAS
Single pulse avalanche energy (Note 2)
I
=18A, R
=50Ω, V
=10V
AR
GS
GS
I
=18A, L=2.7mH
AS
580
mJ
Note:
1.Repetitive rating: pulse width limited by junction temperature.
2
.V
=50V,L=2.7mH,I
=18A,R =50Ω,starting T =25˚C
DD
AS
G
J
3
.I
18A, di/dt 150A/µs, V
V
, T
150°C.
SD
DD
(BR)DSS
J
W


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