SEMICONDUCTOR

RoHS

RoHS

Nell High Power Products

UNIT

Min.

1.07

3.7

THERMAL RESISTANCE

PARAMETER

Thermal resistance, junction to case

SYMBOL

Typ.

Max.

ºC/W

62.5

Thermal resistance, junction to ambient

UNIT

V

ns

μA

pF

10

Max.

100

600

0.24

-100

100

0.73

1325

3

14.5

10.5

45

50

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)

C

I = 1mA,

D

V

= 0V

GS

TEST CONDITIONS

I = 1

A,

D

m

V

=V

DS

GS

V

=600V, V

=0V

DS

GS

T = 25°C

C

Fall time

Gate to source reverse leakage current

Input capacitance

Output capacitance

PARAMETER

Rise time

Gate to source forward leakage current

Turn-on delay time

Reverse transfer capacitance

Breakdown voltage temperature coefficient

Drain to source breakdown voltage

Turn-off delay time

SYMBOL

▲

▲

V

/

(BR)DSS

Drain to source leakage current

V/ºC

Ω

nA

T =125°C

C

Typ.

Min.

0.26

10

V

= 380V,

DD

(Note1,2)

V

= 10V

GS

I = 6.5A, R =4.7Ω

D

G

V

= 100V, V

= 0V, f =1MHz

DS

GS

V

= -30V, V

= 0V

GS

DS

V

= 30V, V

= 0V

GS

DS

Static drain to source on-state resistance

V

= 10V, l = 6.5A

GS

D

V

=480V, V

=0V

DS

GS

2

V

4

V

=V

, I =250μA

GS

DS

D

Gate threshold voltage

TO-220AB

TO-220F

TO-220AB

TO-220F

62.5

ºC/W

OFF CHARACTERISTICS

ON CHARACTERISTICS

DYNAMIC CHARACTERISTICS

1765

65

5

ESR

Equivalent series resistance (G-S)

Drain open

2.8

SWITCHING CHARACTERISTICS

30

39

31.5

100

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V

= 380V,

DD

(Note1,2)

V

= 10V

GS

I = 6.5A,

D

13N60 Series

gfs

Forward transconductance

V

=40V, I =6.5A

DS

D

S

16.3

C

eff

OSS

Output capacitance

Effective output capacitance

V

= 380V, V

= 0V, f =1MHz

DS

GS

V

= 0 to 480V, V

= 0V

DS

GS

145

30

Ω

Total gate charge

Gate to source charge

Gate to drain charge (Miller charge)

30.5

6.0

9.5

nC

40