6N90 datasheet(5/8 Pages) NELLSEMI

Part #	6N90

Description	N-Channel Power MOSFET

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Manufacturer	NELLSEMI [Nell Semiconductor Co., Ltd]

Direct Link	http://www.nellsemi.com

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SEMICONDUCTOR

Nell High Power Products

RoHS

Fig.1 Typical output charactreistics

Drain to Source voltage, V

(V)

DS

Fig.4 Body diode forward voltage variation

with source current and temperature

■ TYPICAL CHARACTERISTICS

-1

10

4.0

3.5

3.0

2.5

2.0

1.5

0

9

12

3

6

0.2

0.4

0.6

0.8

1.0

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1.2

6N90 Series

VGS

Top: 15V

10V

8V

7V

6.5V

6.0V

5.5V

Bottorm:

250µs pulse test

T =25°C

J

0

10

1

10

0

10

-1

10

-2

10

1

10

T = 25 °C

J

T = 15 °C

J

250µs pulse test

V

=50V

DS

T = -55°C

J

2

4

6

8

10

-1

10

0

10

1

10

Fig.2 Typical transfer characteristics

Gate-to-Source voltage, V

(V)

GS

V

= 20 V

GS

V

= 10 V

GS

T = 25

°C

J

15

18

4.5

Drain-to-source current ,I (A)

D

Fig.3 On-resistance variation vs. drain

current and gate voltage

150°C

25°C

*Notes:

1.V

=0V

GS

2.250μs Pulse test

1.4

-1

10

0

10

1

10

Source-drain voltage, V

(V)

SD

C

=C

+C

(C

=shorted)

ISS

GS

GD

DS

C

=C

+C

C

=C

OSS

DS

GD

RSS

GD

Notes:

1.V

=0V

GS

2.f=1MHz

CRSS

COSS

CISS

-1

10

0

10

1

10

0

500

1000

1500

Fig.5 Typical capacitance characteristics

2000

Drain-Source voltage, V

(V)

DS

V

= 180V

DS

V

= 450V

DS

V

= 720V

DS

*Note:I =6A

D

Total gate charge, Q (nC)

G

Fig.6 Typical gate charge characteristics

0

5

10

15

20

25

30

35

0

2

4

6

8

10

12

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