6N65Z

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-734, C

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PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

650

V

Gate-Source Voltage

±20

V

Avalanche Current (Note 2)

6.2

A

Continuous Drain Current

6.2

A

Pulsed Drain Current (Note 2)

24.8

A

Avalanche Energy

Single Pulsed (Note 3)

250

mJ

Repetitive (Note 2)

13

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

ns

Power Dissipation

40

W

Junction Temperature

+150

°C

Operating Temperature

-55 ~ +150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

Junction to Ambient

62.5

°C/W

Junction to Case

3.2

°C/W