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3N65G-TN3-R Datasheet(PDF) 3 Page - Unisonic Technologies

Part # 3N65G-TN3-R
Description  3A, 650V N-CHANNEL POWER MOSFET
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

3N65G-TN3-R Datasheet(HTML) 3 Page - Unisonic Technologies

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3N65
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 8
www.unisonic.com.tw
QW-R502-590.B
ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 μA
650
V
Drain-Source Leakage Current
IDSS
VDS = 650 V, VGS = 0 V
10
μA
Gate-Source Leakage Current
Forward
IGSS
VGS = 30 V, VDS = 0 V
100
nA
Reverse
VGS = -30 V, VDS = 0 V
-100
nA
Breakdown Voltage Temperature Coefficient
BV
DSS/△TJ
ID=250μA,Referenced to 25°C
0.6
V/℃
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250 μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 1.5A
2.9
3.8
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
f = 1MHz
350
450
pF
Output Capacitance
COSS
50
65
pF
Reverse Transfer Capacitance
CRSS
5.5
7.5
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
VDD = 325V, ID = 3.0A,
RG = 25Ω (Note 1, 2)
10
30
ns
Turn-On Rise Time
tR
30
70
ns
Turn-Off Delay Time
tD(OFF)
20
50
ns
Turn-Off Fall Time
tF
30
70
ns
Total Gate Charge
QG
VDS= 520V,ID= 3.0A,
VGS= 10 V (Note 1, 2)
10
13
nC
Gate-Source Charge
QGS
2.7
nC
Gate-Drain Charge
QDD
4.9
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 3.0 A
1.4
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
3.0
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
12
A
Reverse Recovery Time
trr
VGS = 0 V, IS = 3.0 A,
dIF/dt = 100A/μs (Note 1)
210
ns
Reverse Recovery Charge
QRR
1.2
μC
Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
2. Essentially independent of operating temperature.


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