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CS5124 Datasheet(PDF) 3 Page - Cherry Semiconductor Corporation

Part No. CS5124
Description  High Performance, Integrated Current Mode PWM Controllers
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Maker  CHERRY [Cherry Semiconductor Corporation]
Homepage  http://www.cherrycorp.com/
Logo CHERRY - Cherry Semiconductor Corporation

CS5124 Datasheet(HTML) 3 Page - Cherry Semiconductor Corporation

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Electrical Characteristics: -40°C ≤ TJ ≤ 125°C, -40°C ≤ TA ≤ 105°C, 7.60V ≤ VCC ≤ 20V, UVLO = 3.0V, ISENSE = 0V,
CV(CC) = 0.33µF, CGATE = 1nF (ESR = 10Ω), CSS = 470pF CV(FB) = 100pF, unless otherwise stated.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
s
VCC Clamp and BIAS Pin
CS5124 Only. Connect an NFET as follows: BIAS = G, VCC = S, VIN = D.
VCC Clamp Voltage
36V ≤ VIN ≤ 60V, 220nF ≤
7.275
7.9
8.625
V
CSS ≤ 500nF, R = 500k
BIAS Minimum Voltage
Measure Voltage on BIAS with:
1.6
2.8
4
V
10V ≤ VCC ≤ 20V and 50µA ≤ IBIAS ≤ 1mA
BIAS Clamp
With BIAS pin sinking 1mA
12
15
20
V
s
200kHz Oscillator
CS5126 Only
Operating Frequency
175
200
225
kHz
Max Duty Cycle Clamp
78
82.5
85
%
Slope Compensation
12
18
23
mV/µs
(Normal operation)
Slope Compensation
(Synchronized operation)
(Note 1)
7
12
16
mV/µs
SYNC Input Threshold Voltage
1
2
3
V
SYNC Input Impedance
Measured with SYNC = 1V &10V
50
120
230
kΩ
s
400kHz Oscillator
CS5124 Only
Operating Frequency
360
400
440
kHz
Max Duty Cycle Clamp
80.0
82.5
85.0
%
Slope Compensation
15
21
26
mV/µs
s
Soft Start
Soft Start Charge Current
7
10
13
µA
Soft Start Discharge Current
0.5
10.0
mA
VSS Voltage when VFB
VFB = 300mV
1.40
1.62
1.80
V
Begins to Rise
Peak Soft Start Charge Voltage
4.7
4.9
V
Valley Soft Start Discharge Voltage
200
275
400
mV
s
Current Sense
CS5124 Only
First Current Sense Threshold
At max duty cycle.
170
195
215
mV
Second Current Sense Threshold
250
275
315
mV
ISENSE to GATE Prop. Delay
0 to 700mV pulse into ISENSE
60
90
130
ns
(after blanking time)
Leading Edge Blanking Time
0 to 400mV pulse into ISENSE
90
130
180
ns
Internal Offset
(Note 1)
60
mV
s
Current Sense
CS5126 Only
First Current Sense Threshold
At max duty cycle
300
335
360
mV
Second Current Sense
485
525
575
mV
Threshold
ISENSE to GATE Prop. Delay
0 to 800mV pulse into ISENSE
60
90
130
ns
(after blanking time)
Leading Edge Blanking Time
0 to 550mV pulse into ISENSE
110
175
210
ns
Internal Offset
(Note 1)
125
mV


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