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4PTxxAM08 Datasheet(PDF) 5 Page - Nell Semiconductor Co., Ltd |
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4PTxxAM08 Datasheet(HTML) 5 Page - Nell Semiconductor Co., Ltd |
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5 / 7 page  SEMICONDUCTOR RoHS RoHS 0 20 40 60 80 100 4PT Series 0 0.1 0.5 1.0 1.5 2.0 3.0 2.5 3.5 4.0 0.0 1.0 10.0 50.0 0 2 4 6 I (A) TM R (j-a)(°C/W) th Fig.11 On-state characteristics (maximum values) Fig.12 Thermal resistance junction to ambient versus copper surface under tab (DPAK) 8 10 12 14 16 18 20 0 5 10 1 10 100 1000 15 20 25 30 35 Fig.9 Surge peak on-state current versus number of ctcles I (A) TSM 0.01 0.10 1.00 10.00 1 10 100 300 I (A),I²t(A²s) TSM Fig.10 Non-repetitive surge peak on-state current, and corresponding values of l²t No n repe titive T ini tal =2 5° C j Re pe titive T =1 15 °C c Nu mb er of cycles t =1 0ms p One cycle dI /dt Iimitat ion Tj ini tal =25 °C ITSM I²t Si nusoi dal pul se wi th wi dt h < 10ms t (ms) p V (V) TM S(c m²) Epoxy pr int ed ci rcui t boar d FR4 cop per thi ck nes s = 35µm 0.01 0.10 10.00 2 6 8 200 600 1000 0 400 800 0 0 4 2 4 6 1400 1800 1200 1600 2000 1.00 dV/dt[R ] / dV/dt[R =220Ω] GK GK 22 8 10 12 14 16 18 20 10 Fig.7 Relative variation of dV/dt immunity versus gate-cathode resistance (typical values) Fig.8 Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values) dV/dt[C ] / dV/dt[R =220Ω] GK GK Tj=125 °C V =0.67 X V D DRM R (KΩ) GK T =125 °C j V =0.67 X V D DRM R =220Ω GK C (nF) GK T = 25°C j T =max j T max j T =0.85V t0 R =90mΩ d Page 5 of 7 www.nellsemi.com |
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