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4PTxxF03 Datasheet(PDF) 1 Page - Nell Semiconductor Co., Ltd |
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4PTxxF03 Datasheet(HTML) 1 Page - Nell Semiconductor Co., Ltd |
1 / 7 page Page 1 of 7 SEMICONDUCTOR 4PT Series RoHS RoHS Sensitive gate SCRs, 4A SYMBOL IT(RMS) 4 ITSM Non repetitive surge peak on-state current (full cycle, T initial = 25°C) j A 2 I t 2 I t Value for fusing 4.5 2 A s dI/dt Critical rate of rise of on-state current 50 IGM Peak gate current PG(AV) Average gate power dissipation Tstg Storage temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 ºC A/µs A A W UNIT VALUE 30 33 F =50 Hz F =60 Hz t = 20 ms t = 16.7 ms t = 10 ms p F = 60 Hz T =125ºC j T = 125ºC j T = 125ºC j T = 20 µs p Tj ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITIONS Main Features Symbol Value Unit IT(RMS) V /V DRM RRM IGT 4 A V µA 10 to 200 600 to 800 DESCRIPTION Thanks to highly sensitive triggering levels, the 4PT series is suitable for all applications where the available gate current is limited, such as motor control for hand tools, kitchen aids, capacitive discharge ignitions, protection overvoltage crowbar for low power supplies among others. Available in through-hole or surface-mount packages, V 600 and 800 T =125ºC j VDRM VRRM Repetitive peak off-state voltage Repetitive peak reverse voltage they provide an optimized performance in a limited space area. RMS on-state current full sine wave (180° conduction angle ) 1.2 0.2 Average on-state current (180° conduction angle) IT(AV) 2.5 A 1 2 3 1 2 3 2 2 2 1 2 3 TO-220AB (Non-lnsulated) TO-251 (I-PAK) TO-252 (D-PAK) I = 2xl , t ≤100ns G GT r 1 2 3 TO-220AB (lnsulated) (4PTxxF) (4PTxxG) (4PTxxA) (4PTxxAI) www.nellsemi.com T =115°C c T =110°C c TO-251/TO-252/TO-220AB TO-220AB insulated TO-251/TO-252/TO-220AB TO-220AB insulated T =115°C c T =110°C c TO-126 (Non-lnsulated) (4PTxxAM) T =95°C c T =95°C c TO-126 1 2 3 1 2 3 TO-202-3 TO-126 TO-202-3 T =60°C c T =60°C c TO-202-3 (4PTxxAT) 3(G) 1(K) 2(A) |
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