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4PTxxA05 Datasheet(PDF) 4 Page - Nell Semiconductor Co., Ltd

Part # 4PTxxA05
Description  Sensitive gate SCRs, 4A
Download  7 Pages
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Manufacturer  NELLSEMI [Nell Semiconductor Co., Ltd]
Direct Link  http://www.nellsemi.com
Logo NELLSEMI - Nell Semiconductor Co., Ltd

4PTxxA05 Datasheet(HTML) 4 Page - Nell Semiconductor Co., Ltd

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SEMICONDUCTOR
RoHS
RoHS
I
,I ,I [T ] / I
,I ,I [T =25
°C]
GT H L
j
GT H L
j
0
1
2
3
4
5
4PT Series
-40
-20
0
20
40
60
80
100
120
140
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Fig.5 Relative variation of gate trigger current
and holding current versus junction
temperature
Fig.6 Relative variation of holding current
versus gate-cathode resistance
(typical values)
1E-2
1E-1
1E+0
1E+1
I [R
] / I [R
=1KΩ
H
GK
H
GK
]
Fig.3 Average and DC on-state current versus
ambient temperature (DPAK)
Fig.4 Relative variation of thermal impedance
junction to ambient versus pulse duration
(DPAK)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
1E-3
1E-2
1E-1
1E+0
I (AV)(A)
T
K=[Z
)/R
]
th(j-c
th(j-c)
Zth(j-a)
Zth(j-c)
t (s)
p
Device mounted on FR4 with
recommended pad layout
α=180°
DPAK (S = 0.5cm²)
DC
IPAK
α=180°
T
(°C)
amb
DC
Device mounted on FR4 with
recommended pad layout
IGT
T (°C)
j
l
IL
hand
R
=1K
Ω
GK
Tj=25
°C
R
(KΩ)
GK
Fig.1 Maximum average power dissipation versus
on-state current
Fig.2 Average and DC on-state current versus
case temperature
P(W)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0
25
50
75
100
125
I
(A)
T(AV)
0.5
0.0
360°
α
α=180°
I
(A)
T(AV)
DC
α=180°
TO-220AB
Insulated
T
(°C)
case
TO -251/ TO -252
TO -220AB
TO-126
TO-202-3
Page 4 of 7
www.nellsemi.com


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