Alternative Device Available

SFH610A, SFH6106

www.vishay.com

Vishay Semiconductors

Rev. 2.2, 23-May-13

2

Document Number: 83666

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Notes

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability.

hole devices (DIP).

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

INPUT

Reverse voltage

6V

DC forward current

60

mA

Surge forward current

t

 10 μs

2.5

A

Power dissipation

100

mW

OUTPUT

Collector emitter voltage

70

V

Emitter collector voltage

7V

Collector current

50

mA

100

mA

Power dissipation

150

mW

COUPLER

Isolation test voltage



between emitter and detector

5300

Creepage distance

7mm

Clearance distance

7mm

Insulation thickness between



emitter and detector

0.4

mm

Comparative tracking index per DIN

IEC112/VDE 0303 part 1

175

Isolation resistance





Storage temperature range

- 55 to + 150

°C

Ambient temperature range

- 55 to + 100

°C

max. 10 s, dip soldering distance

to seating plane

 1.5 mm

260

°C

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

1.25

1.65

V

Reverse current

0.01

10

μA

Capacitance

13

pF

Thermal resistance

750

K/W

OUTPUT

Collector emitter capacitance

5.2

pF

Thermal resistance

500

K/W

Collector emitter leakage current

SFH610A-1

250

nA

SFH6106-1

250

nA

SFH610A-2

250

nA

SFH6106-2

250

nA

SFH610A-3

5

100

nA

SFH6106-3

5

100

nA

SFH610A-4

5

100

nA

SFH6106-4

5

100

nA

SFH610A-5

5

100

nA

SFH6106-5T

5

100

nA