C35B datasheet(1/3 Pages) DIGITRON

Part #	C35B

Description	SILICON CONTROLLED RECTIFIERS

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Manufacturer	DIGITRON [Digitron Semiconductors]

Direct Link	http://www.digitroncorp.com

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DIGITRON SEMICONDUCTORS

144 Market Street

Kenilworth NJ 07033 USA

phone +1.908.245-7200

C35 SERIES

SILICON CONTROLLED RECTIFIERS

Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak repetitive forward and reverse blocking voltage(1)

(TC = -65 to +125°C)

C35U

C35F

C35A

C35G

C35B

C35H

C35C

C35D

C35E

C35M

C35S

C35N

VDRM or

VRRM

25

50

100

150

200

250

300

400

500

600

700

800

Volts

Non-repetitive peak reverse voltage

(TC = -65 to +125°C, V < 5.0ms)

C35U

C35F

C35A

C35G

C35B

C35H

C35C

C35D

C35E

C35M

C35S

C35N

VRSM

35

75

150

225

300

350

400

500

600

720

840

960

Volts

Forward current RMS (all conduction angles)

IT(RMS)

35

Amps

Peak non-repetitive surge current (1cycle, 60 Hz)

ITSM

225

Amps

Circuit fusing considerations (t = 8.3ms)

I2t

75

A2s

Forward peak gate power

PGM

5

Watts

Forward average gate power

PG(AV)

0.5

Watts

Peak reverse gate voltage

VGRM

5

Volts

Operating junction temperature range

TJ

-65 to +125

°C

Storage temperature range

Tstg

-65 to +150

°C

Note 1: VDRM and VRRM for all types can be applied on a continuous dc basis without incurring damage. Ratings apply for zero or negative gate voltage. Devices should not be tested

for blocking capability in a manner such that the voltage supplied exceeds the rated blocking voltage.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Maximum

Unit

Thermal resistance, junction to case

R

ӨJC

1.7

°C/W

sales@digitroncorp.com

fax +1.908.245-0555

www.digitroncorp.com

Rev. 20130129

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