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C180P Datasheet(PDF) 1 Page - Digitron Semiconductors |
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C180P Datasheet(HTML) 1 Page - Digitron Semiconductors |
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1 / 4 page  DIGITRON SEMICONDUCTORS 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 C180A-C180PC 150A PHASE CONTROL SCR Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Characteristics Symbol C180 Units RMS on-state current IT(RMS) 235 A Average on-state current IT(AV) 150 A Peak one-cycle surge (non-repetitive) on-state current (60Hz) ITSM 3500 A Peak one-cycle surge (non-repetitive) on-state current (50Hz) ITSM 3200 A Critical rate of rise of on-state current (non-repetitive) di/dt 800 A/µs Critical rate of rise of on-state current (repetitive) di/dt 150 A/µs I2t (for fusing), 8.3 ms I2t 50,800 A2s Peak gate power dissipation PGM 10 W Average gate power dissipation PG(AV) 2 W Storage temperature Tstg -40 to +150 °C Operating temperature TJ -40 to +125 °C Mounting torque 250 to 300 In.-lb. Mounting torque 28 to 34 N-m VOLTAGE RATINGS Characteristics C180A C180B C180C C180D C180E C180N C180S C180M C180T C180P C180PA C180PB C180PC Working peak reverse voltage 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 ELECTRICAL AND THERMAL CHARACTERISTICS Characteristics Symbol Test Conditiions C180 Units Voltage – Blocking State Maximums Forward leakage, peak IDRM TJ = 125°C, VDRM = Rated 20 mA Reverse leakage, peak IRRM TJ = 125°C, VRRM = Rated 20 mA Current – Conducting State Maximums Peak on-state voltage VTM TJ = 25°C, ITM = 1500A 2.85 V Switching Typical turn-off time tq IT = 150A, TJ = 125°C, diR/dt = 12.5A/µsec, reapplied dv/dt = 20V/µsec, linear to 0.8VDRM, VR = 50V 100 µsec Typical delay time td IT = 100A, VDRM = Rated, gate supply = 10V open ckt, 25Ω, 0.1 µsec rise time 1.0 µsec Minimum critical dv/dt exponential to VDRM dv/dt TJ = 125°C, gate open 200 V/µsec Thermal Maximum thermal resistance, junction to case R θJC .14 °C/W Case to sink, lubricated R θCS 0.075 °C/W Gate – Maximum Parameters Gate current to trigger IGT TC = 25°C, VD = 6Vdc, RL = 3Ω 150 mA Gate voltage to trigger VGT TC = -40 to +125°C, VD = 6Vdc, RL = 3Ω 3.0 V Non-triggering gate voltage VGDM TJ = 125°C, Rated VDRM, RL = 1000Ω 0.15 V Peak forward gate current IGTM 10 A Peak reverse gate voltage VGRM 5 V sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com Rev. 20130116 |
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