Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

THS4131IDGNR Datasheet(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Part # THS4131IDGNR
Description  HIGH-SPEED, LOW-NOISE, FULLY-DIFFERENTIAL I/O AMPLIFIERS
Download  37 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

THS4131IDGNR Datasheet(HTML) 2 Page - National Semiconductor (TI)

  THS4131IDGNR Datasheet HTML 1Page - National Semiconductor (TI) THS4131IDGNR Datasheet HTML 2Page - National Semiconductor (TI) THS4131IDGNR Datasheet HTML 3Page - National Semiconductor (TI) THS4131IDGNR Datasheet HTML 4Page - National Semiconductor (TI) THS4131IDGNR Datasheet HTML 5Page - National Semiconductor (TI) THS4131IDGNR Datasheet HTML 6Page - National Semiconductor (TI) THS4131IDGNR Datasheet HTML 7Page - National Semiconductor (TI) THS4131IDGNR Datasheet HTML 8Page - National Semiconductor (TI) THS4131IDGNR Datasheet HTML 9Page - National Semiconductor (TI) Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 37 page
background image
THS4130
THS4131
SLOS318H
– MAY 2000 – REVISED MAY 2011
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
AVAILABLE OPTIONS(1)
PACKAGED DEVICES
MSOP PowerPAD
MSOP
SMALL OUTLINE
EVALUATION
TA
(D)
(DGN)
SYMBOL
(DGK)
SYMBOL
MODULES
THS4130CD
THS4130CDGN
AOB
THS4130CDGK
ATP
THS4130EVM
0
°C to +70°C
THS4131CD
THS4131CDGN
AOD
THS4131CDGK
ATQ
THS4131EVM
THS4130ID
THS4130IDGN
AOC
THS4130IDGK
ASO
–40°C to +85°C
THS4131ID
THS4131IDGN
AOE
THS4131IDGK
ASP
(1)
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or visit the
device product folder at www.ti.com.
ABSOLUTE MAXIMUM RATINGS
(1)
Over operating free-air temperature range,unless otherwise noted.
UNIT
VCC– to VCC+
Supply voltage
±33 V
VI
Input voltage
±VCC
IO
(2)
Output current
150 mA
VID
Differential input voltage
±6 V
Continuous total power dissipation
See Dissipation Rating table
TJ
(3)
Maximum junction temperature
+150
°C
TJ
(4)
Maximum junction temperature, continuous operation, long-term reliability
+125
°C
TA
Operating free-air temperature
C-suffix
0
°C to +70°C
I-suffix
–40°C to +85°C
TSTG
Storage temperature
–65°C to +150°C
ESD ratings:
HBM
2500 V
CDM
1500 V
MM
200 V
(1)
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
The THS413x may incorporate a PowerPAD on the underside of the chip. This acts as a heatsink and must be connected to a thermally
dissipative plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature which could
permanently damage the device. See TI technical briefs SLMA002 and SLMA004 for more information about using the PowerPAD
thermally-enhanced package.
(3)
The absolute maximum temperature under any condition is limited by the constraints of the silicon process.
(4)
The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may
result in reduced reliability and/or lifetime of the device.
DISSIPATION RATING TABLE
POWER RATING(2)
PACKAGE
θJA
(1) (°C/W)
θJC (°C/W)
TA= +25°C
TA = +85°C
D
97.5
38.3
1.02 W
410 mW
DGN
58.4
4.7
1.71 W
685 mW
DGK
134
72
750 mW
300 mW
(1)
This data was taken using the JEDEC standard High-K test PCB.
(2)
Power rating is determined with a junction temperature of +125
°C. This is the point where distortion starts to substantially increase.
Thermal management of the final PCB should strive to keep the junction temperature at or below +125
°C for best performance and
long-term reliability.
2
Copyright
© 2000–2011, Texas Instruments Incorporated


Similar Part No. - THS4131IDGNR

ManufacturerPart #DatasheetDescription
logo
Texas Instruments
THS4131IDGNR TI-THS4131IDGNR Datasheet
1Mb / 36P
[Old version datasheet]   HIGH-SPEED, LOW-NOISE, FULLY-DIFFERENTIAL I/O AMPLIFIERS
THS4131IDGNRG4 TI-THS4131IDGNRG4 Datasheet
1Mb / 36P
[Old version datasheet]   HIGH-SPEED, LOW-NOISE, FULLY-DIFFERENTIAL I/O AMPLIFIERS
More results

Similar Description - THS4131IDGNR

ManufacturerPart #DatasheetDescription
logo
Texas Instruments
THS4130CDG4 TI-THS4130CDG4 Datasheet
1Mb / 36P
[Old version datasheet]   HIGH-SPEED, LOW-NOISE, FULLY-DIFFERENTIAL I/O AMPLIFIERS
THS4130 TI-THS4130 Datasheet
569Kb / 27P
[Old version datasheet]   HIGH SPEED LOW NOISE, FULLY DIFFERENTIAL I/O AMPLIFIERS
THS4141CDGNR TI-THS4141CDGNR Datasheet
1Mb / 33P
[Old version datasheet]   HIGH-SPEED FULLY DIFFERENTIAL I/O AMPLIFIERS
logo
National Semiconductor ...
THS4140 NSC-THS4140 Datasheet
1Mb / 33P
   HIGH-SPEED FULLY DIFFERENTIAL I/O AMPLIFIERS
logo
Texas Instruments
THS4121IDGN TI1-THS4121IDGN Datasheet
1Mb / 30P
[Old version datasheet]   HIGH-SPEED FULLY DIFFERENTIAL I/O AMPLIFIERS
THS4121CD TI-THS4121CD Datasheet
1Mb / 30P
[Old version datasheet]   HIGH-SPEED FULLY DIFFERENTIAL I/O AMPLIFIERS
THS4140 TI-THS4140 Datasheet
523Kb / 24P
[Old version datasheet]   HIGH SPEED FULLY DIFFERENTIAL I/O AMPLIFIERS
THS4120 TI-THS4120 Datasheet
504Kb / 23P
[Old version datasheet]   HIGH-SPEED FULLY DIFFERENTIAL I/O AMPLIFIERS
logo
National Semiconductor ...
THS4121 NSC-THS4121 Datasheet
1Mb / 31P
   HIGH-SPEED FULLY DIFFERENTIAL I/O AMPLIFIERS
logo
Texas Instruments
THS2630 TI-THS2630_V01 Datasheet
1Mb / 32P
[Old version datasheet]   THS2630 High-Speed, Low-Noise, Fully-Differential I/O Amplifier
JANUARY 2023
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com