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LMH6554LEXNOPB Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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LMH6554LEXNOPB Datasheet(HTML) 3 Page - National Semiconductor (TI) |
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3 / 24 page  LMH6554 www.ti.com SNOSB30O – OCTOBER 2008 – REVISED MARCH 2013 +5V Electrical Characteristics (1) Unless otherwise specified, all limits are ensured for TA = +25°C, AV = +2, V + = +2.5V, V− = −2.5V, R L = 200Ω, VCM = (V ++V- )/2, RF = 200Ω, for single-ended in, differential out. Boldface Limits apply at the temperature extremes. Symbol Parameter Conditions Min (2) Typ (3) Max (2) Units AC Performance (Differential) AV = 1, VOUT = 0.2 VPP 2800 SSBW Small Signal −3 dB Bandwidth (2) AV = 2, VOUT = 0.2 VPP 2500 MHz AV = 4, VOUT = 0.2 VPP 1600 AV = 1, VOUT = 2 VPP 1800 LSBW Large Signal Bandwidth AV = 2, VOUT = 2 VPP 1500 MHz AV = 2, VOUT = 1.5 VPP 1900 0.1 dBBW 0.1 dB Bandwidth AV = 2, VOUT = 0.2 VPP, RF = 250Ω 830 MHz SR Slew Rate 4V Step 6200 V/ μs 2V Step, 10–90% 290 tr/tf Rise/Fall Time ps 0.4V Step, 10–90% 150 Ts_0.1 0.1% Settling Time 2V Step, RL = 200Ω 4 ns Overdrive Recovery Time VIN = 2V, AV = 5 V/V 6 ns Distortion and Noise Response VOUT = 2 VPP, f = 20 MHz -102 VOUT = 2 VPP, f = 75 MHz -96 HD2 2nd Harmonic Distortion VOUT = 2 VPP, f = 125 MHz -87 dBc VOUT = 2 VPP, f = 250 MHz −79 VOUT = 1.5 VPP, f = 250 MHz −81 VOUT = 2 VPP, f = 20 MHz −110 VOUT = 2 VPP, f = 75 MHz −97 HD3 3rd Harmonic Distortion VOUT = 2 VPP, f = 125 MHz −87 dBc VOUT = 2 VPP, f = 250 MHz −70 VOUT = 1.5 VPP, f = 250 MHz −75 OIP3 Output 3rd-Order Intercept f = 150 MHz, VOUT = 2VPP Composite 46.5 dBm IMD3 Two-Tone Intermodulation f = 150 MHz, VOUT = 2VPP Composite −97 dBc en Input Voltage Noise Density f = 10 MHz 0.9 nV/ √Hz in+ Input Noise Current f = 10 MHz 11 pA/ √Hz in- Input Noise Current f = 10 MHz 11 pA/ √Hz NF Noise Figure (4) 50 Ω System, AV = 7.3, 100 MHz 7.7 dB Input Characteristics IBI+ / IBI- −75 −29 20 µA TCIbi Input Bias Current Temperature Drift 8 µA/°C VCM = 0V, VID = 0V, IBID Input Bias Current (5) −10 1 10 μA IBOFFSET = (IB-- IB+)/2 Input Bias Current Diff Offset TCIbo 0.006 µA/°C Temperature Drift (3) CMRR Common Mode Rejection Ratio DC, VCM = 0V, VID = 0V 83 dB (1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No specification of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA. See Application Information for information on temperature de-rating of this device." Min/Max ratings are based on product characterization and simulation. Individual parameters are tested as noted. (2) Limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlation using Statistical Quality Control (SQC) methods. (3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped production material. (4) For test schematic, refer to Figure 35. (5) IBI is referred to a differential output offset voltage by the following relationship: VOD(OFFSET) = IBI*2RF. Copyright © 2008–2013, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: LMH6554 |
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