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IXTP15N50L2 Datasheet(PDF) 2 Page - IXYS Corporation

Part # IXTP15N50L2
Description  N-Channel Enhancement Mode Avalanche Rated
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTP15N50L2 Datasheet(HTML) 2 Page - IXYS Corporation

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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA15N50L2 IXTP15N50L2
IXTH15N50L2
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692
7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
g
fs
V
DS = 10V, ID = 0.5 • ID25, Note 1
4.5
6.3
8.0
S
C
iss
4080
pF
C
oss
V
GS = 0V, VDS = 25V, f = 1MHz
265
pF
C
rss
68
pF
t
d(on)
38
ns
t
r
73
ns
t
d(off)
110
ns
t
f
65
ns
Q
g(on)
123
nC
Q
gs
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
20
nC
Q
gd
72
nC
R
thJC
0.42
°C/W
R
thCS
(TO-220)
0.50
°C/W
(TO-247)
0.25
°C/W
Safe Operating Area Specification
Characteristic Values
Symbol
Test Conditions
Min.
Typ.
Max.
SOA
V
DS = 400V, ID = 375mA, TC = 75°C, tp = 2s
150
W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
I
S
V
GS = 0V
15
A
I
SM
Repetitive, pulse width limited by T
JM
60
A
V
SD
I
F = 15A, VGS = 0V, Note 1
1.5
V
t
rr
570
ns
I
F = 15A, -di/dt = 100A/μs, VR = 100V, VGS = 0V
TO-247 Outline
1 = Gate
2 = Drain
3 = Source
Pins: 1 - Gate
2 - Drain
3 - Source
TO-220 Outline
Resistive Switching Times
V
GS = 10V, 0.5 • VDSS, ID = 0.5 • ID25
R
G = 10Ω (External)
Note
1: Pulse test, t
≤ 300μs, duty cycle, d ≤ 2%.
TO-263 Outline
1 = Gate
2 = Drain
3 = Source
4 = Drain


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