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IXTP15N50L2 Datasheet(PDF) 2 Page - IXYS Corporation |
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IXTP15N50L2 Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 5 page IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXTA15N50L2 IXTP15N50L2 IXTH15N50L2 IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 Symbol Test Conditions Characteristic Values (T J = 25°C, Unless Otherwise Specified) Min. Typ. Max. g fs V DS = 10V, ID = 0.5 • ID25, Note 1 4.5 6.3 8.0 S C iss 4080 pF C oss V GS = 0V, VDS = 25V, f = 1MHz 265 pF C rss 68 pF t d(on) 38 ns t r 73 ns t d(off) 110 ns t f 65 ns Q g(on) 123 nC Q gs V GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 20 nC Q gd 72 nC R thJC 0.42 °C/W R thCS (TO-220) 0.50 °C/W (TO-247) 0.25 °C/W Safe Operating Area Specification Characteristic Values Symbol Test Conditions Min. Typ. Max. SOA V DS = 400V, ID = 375mA, TC = 75°C, tp = 2s 150 W Source-Drain Diode Symbol Test Conditions Characteristic Values (T J = 25°C, Unless Otherwise Specified) Min. Typ. Max. I S V GS = 0V 15 A I SM Repetitive, pulse width limited by T JM 60 A V SD I F = 15A, VGS = 0V, Note 1 1.5 V t rr 570 ns I F = 15A, -di/dt = 100A/μs, VR = 100V, VGS = 0V TO-247 Outline 1 = Gate 2 = Drain 3 = Source Pins: 1 - Gate 2 - Drain 3 - Source TO-220 Outline Resistive Switching Times V GS = 10V, 0.5 • VDSS, ID = 0.5 • ID25 R G = 10Ω (External) Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. TO-263 Outline 1 = Gate 2 = Drain 3 = Source 4 = Drain |
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