IXBT24N170 datasheet(1/5 Pages) IXYS

Part #	IXBT24N170

Description	High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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Symbol

Test Conditions

Maximum Ratings

V

CES

T

J

= 25°C to 150°C

1700

V

CGR

T

J

= 25°C to 150°C, R

GE = 1MΩ

1700

V

GES

Continuous

± 20

V

GEM

Transient

± 30

V

I

C25

T

C

= 25°C

60

A

I

C110

T

C

= 110°C

24

A

I

CM

T

C

= 25°C, 1ms

230

A

SSOA

V

GE = 15V, TVJ = 125°C, RG = 10Ω

I

CM = 50

A

(RBSOA)

Clamped Inductive Load

V

CES ≤ 1360

V

P

C

T

C

= 25°C

250

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6mm (0.062 in.) from Case for 10s

300

°C

T

SOLD

Plastic Body for 10 seconds

260

°C

M

d

Mounting Torque (TO-247)

1.13/10

Nm/lb.in.

Weight

TO-268

4

g

TO-247

6

g

DS100190A(03/13)

IXBT24N170

IXBH24N170

Symbol Test Conditions

Characteristic Values

(T

J = 25°C Unless Otherwise Specified)

Min.

Typ.

Max.

BV

CES

I

C = 250μA, VGE = 0V

1700

V

GE(th)

I

C = 250μA, VCE = VGE

2.5

5.0

V

I

CES

V

CE = 0.8 • VCES, VGE = 0V

25 μA

T

J = 125°C

500 μA

I

GES

V

CE = 0V, VGE = ± 20V

±100 nA

V

CE(sat)

I

C = IC110, VGE = 15V, Note 1

2.5

V

T

J = 125°C

2.4

V

CES

= 1700V

I

C110

= 24A

V

CE(sat) ≤

≤≤≤≤ 2.5V

High Voltage, High Gain

BIMOSFETTM Monolithic

Bipolar MOS Transistor

Features

High Blocking Voltage

International Standard Packages

Low Conduction Losses

Advantages

Low Gate Drive Requirement

High Power Density

Applications

Switch-Mode and Resonant-Mode

Power Supplies

Uninterruptible Power Supplies (UPS)

Laser Generators

Capacitor Discharge Circuits

AC Switches

G = Gate

C

= Collector

E = Emiiter

Tab = Collector

TO-247 (IXBH)

G

E

C (Tab)

C

TO-268 (IXBT)

E

G

C (Tab)

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