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IRFR3710ZPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRFR3710ZPBF Datasheet(HTML) 1 Page - International Rectifier |
1 / 12 page IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF HEXFET® Power MOSFET VDSS = 100V RDS(on) = 18mΩ ID = 42A 09/27/10 www.irf.com 1 This HEXFET® Power MOSFET utilizes the latestprocessingtechniquestoachieveextremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These featurescombinetomakethisdesignanextremely efficient and reliable device for use in a wide variety of applications. S D G Description l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Multiple Package Options l Lead-Free Features HEXFET® is a registered trademark of International Rectifier. I-Pak Leadform 701 IRFU3710Z-701PbF Refer to page 11 for package outline D-Pak IRFR3710ZPbF I-Pak IRFU3710ZPbF Absolute Maximum Ratings Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS (Thermally limited) Single Pulse Avalanche Energy d mJ EAS (Tested ) Single Pulse Avalanche Energy Tested Value h IAR Avalanche Current à A EAR Repetitive Avalanche Energy g mJ TJ Operating Junction and TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.05 RθJA Junction-to-Ambient (PCB mount) i ––– 50 °C/W RθJA Junction-to-Ambient ––– 110 -55 to + 175 300 (1.6mm from case ) 140 0.95 ± 20 Max. 56 39 220 42 200 150 See Fig.12a, 12b, 15, 16 PD - 95513D |
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