Document Number: 91087

www.vishay.com

S11-1052-Rev. D, 30-May-11

1

This document is subject to change without notice.

Power MOSFET

IRF9640S, SiHF9640S, IRF9640L, SiHF9640L

Vishay Siliconix

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• P-Channel

•Fast Switching

• Ease of Paralleling

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

provides the highest power capability and the lowest

possible on-resistance in any existing surface mount

applications

because

of

its low

internal

connection

resistance and can dissipate up to 2.0 W in a typical surface

mount application. The through-hole version (IRF9640L,

SiHF9640L) is available for low-profile applications.

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

PRODUCT SUMMARY

- 200

0.50

44

7.1

27

Configuration

Single

S

G

D

P-Channel MOSFET

G

D

S

G

D

S

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

SiHF9640S-GE3

-

-

SiHF9640L-GE3

Lead (Pb)-free

IRF9640SPbF

IRF9640LPbF

SiHF9640S-E3

SiHF9640L-E3

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

- 200

V

Gate-Source Voltage

± 20

Continuous Drain Current

- 11

A

- 6.8

- 44

Linear Derating Factor

1.0

W/°C

0.025

700

mJ

- 11

A

13

mJ

Maximum Power Dissipation

125

W

3.0

dV/dt

- 5.0

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

* Pb containing terminations are not RoHS compliant, exemptions may apply