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OPA2889IDG4 Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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OPA2889IDG4 Datasheet(HTML) 3 Page - National Semiconductor (TI) |
3 / 38 page ELECTRICAL CHARACTERISTICS: VS = ±5V OPA2889 www.ti.com ....................................................................................................................................................... SBOS373B – JUNE 2007 – REVISED AUGUST 2008 At TA = +25°C, RF = 750Ω, G = +2V/V, and RL = 100Ω, unless otherwise noted. OPA2889ID, IDGS MIN/MAX OVER TYP TEMPERATURE 0°C to –40°C to MIN/ TEST PARAMETER CONDITIONS +25°C +25°C(2) +70°C(3) +85°C(3) UNITS MAX LEVEL(1) AC PERFORMANCE Small-Signal Bandwidth G = +1V/V, VO = 100mVPP, RF = 0Ω 115 MHz typ C G = +2V/V, VO = 100mVPP 60 40 36 32 MHz min B G = +10V/V, VO = 100mVPP 8 6 5 4.5 MHz min B Gain Bandwidth Product G > +20V/V 75 60 50 45 MHz min B Bandwidth for 0.1dB Flatness G = +2V/V, VO = 100mVPP 14 MHz typ C Peaking at a Gain of +1V/V VO < 100mVPP , RF = 0 Ω 1 dB typ C Large-Signal Bandwidth G = +2V/V, VO = 2VPP 70 MHz typ C Slew Rate G = +2V/V, VO = 2V Step 250 175 160 150 V/ µs min B Rise-and-Fall Time 0.2V Step 6 ns typ C Settling Time to 0.02% G = +1V/V, VO = 2V Step 36 ns typ C Settling Time to 0.1% 25 ns typ C Harmonic Distortion G = +2V/V, f = 1MHz, VO = 2VPP 2nd-Harmonic RL = 200Ω –75 –65 –62 –60 dBc max B RL ≥ 500Ω –80 –73 –68 –65 dBc max B 3rd-Harmonic RL = 200Ω –80 –74 –70 –68 dBc max B RL ≥ 500Ω –82 –80 –75 –72 dBc max B Input Voltage Noise f > 100kHz 8.4 10 11.5 12 nV/ √Hz max B Input Current Noise f > 100kHz 0.7 1 1.2 1.4 pA/ √Hz max B Differential Gain G = +2V/V, VO = 1.4VPP, RL = 150Ω 0.06 % typ C Differential Phase G = +2V/V, VO = 1.4VPP, RL = 150Ω 0.04 ° typ C Channel-to-Channel Crosstalk f = 5MHz, Input-referred –85 dB typ C DC PERFORMANCE(4) Open-Loop Voltage Gain (AOL) VO = 0V, RL = 100Ω 66 60 58 57 dB min A Input Offset Voltage VCM = 0V ±1.5 ±5 ±5.9 ±6.3 mV max A Average Offset Voltage Drift VCM = 0V ±20 ±20 µV/°C max B Input Bias Current VCM = 0V ±150 ±750 ±840 ±880 nA max A Average Input Bias Current Drift VCM = 0V ±2 ±2 nA/°C max B Input Offset Current VCM = 0V ±50 ±200 ±225 ±235 nA max A Average Input Offset Current VCM = 0V ±0.5 ±0.5 nA/°C max B Drift INPUT Common-Mode Input Range ±3.9 ±3.8 ±3.7 ±3.6 V min A (CMIR)(5) Common-Mode Rejection Ratio VCM = 0V, Input-referred 70 60 59 58 dB min A (CMRR) Input Impedance Differential VCM = 0V 3.5 || 0.5 M Ω || pF typ C Common-Mode VCM = 0V 170 || 0.8 M Ω || pF typ C (1) Test levels: (A) 100% tested at +25°C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only for information. (2) Junction temperature = ambient for +25°C tested specifications. (3) Junction temperature = ambient at low temperature limit; junction temperature = ambient +4°C at high temperature limit for over temperature specifications. (4) Current is considered positive out-of-node. VCM is the input common-mode voltage. (5) Tested < 3dB below minimum specified CMRR at ±CMIR limits Copyright © 2007–2008, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Link(s): OPA2889 |
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