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OPA830IDBVT Datasheet(PDF) 4 Page - National Semiconductor (TI) |
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OPA830IDBVT Datasheet(HTML) 4 Page - National Semiconductor (TI) |
4 / 37 page OPA830 SBOS263F − AUGUST 2004 − REVISED AUGUST 2008 www.ti.com 4 ELECTRICAL CHARACTERISTICS: VS = +5V Boldface limits are tested at +25 °C. At TA = 25°C, G = +2, RF = 750Ω, and RL = 150Ω to VS/2, unless otherwise noted (see Figure 1). OPA830ID, IDBV TYP MIN/MAX OVER TEMPERATURE TEST PARAMETER CONDITIONS +25 °C +25 °C(1) 0 °C to 70 °C(2) −40 °C to +85 °C(2) UNITS MIN/ MAX TEST LEVEL (3) AC PERFORMANCE (see Figure 1) Small-Signal Bandwidth G = +1, VO ≤ 0.2VPP 250 MHz typ C G = +2, VO ≤ 0.2VPP 110 72 70 68 MHz min B G = +5, VO ≤ 0.2VPP 24 17 16 15 MHz min B G = +10, VO ≤ 0.2VPP 11 8 7 6 MHz min B Gain-Bandwidth Product G ≥ +10 110 84 80 79 MHz min B Peaking at a Gain of +1 VO ≤ 0.2VPP 5 dB typ C Slew Rate G = +2, 2V Step 550 280 270 260 V/ µs min B Rise Time 0.5V Step 3.3 5.7 5.8 5.9 ns max B Fall Time 0.5V Step 3.3 5.7 5.8 5.9 ns max B Settling Time to 0.1% G = +2, 1V Step 43 64 66 67 ns max B Harmonic Distortion VO = 2VPP, f = 5MHz 2nd-Harmonic RL = 150Ω −62 −55 −54 −53 dBc max B RL ≥ 500Ω −64 −58 −57 −56 dBc max B 3rd-Harmonic RL = 150Ω −58 −50 −49 −48 dBc max B RL ≥ 500Ω −84 −66 −63 −60 dBc max B Input Voltage Noise f > 1MHz 9.2 10.2 10.7 11.2 nV/ √Hz max B Input Current Noise f > 1MHz 3.5 4.5 5.0 5.5 pA/ √Hz max B NTSC Differential Gain 0.08 % typ C NTSC Differential Phase 0.09 ° typ C DC PERFORMANCE(4) RL = 150Ω Open-Loop Voltage Gain 72 66 65 64 dB min A Input Offset Voltage ±0.5 ±5.0 ±6.0 ±6.5 mV max A Average Offset Voltage Drift — ±20 ±20 µV/°C max B Input Bias Current VCM = 2.5V +5 +10 +12 +13 µA max A Input Bias Current Drift ±12 ±12 nA/ °C max B Input Offset Current VCM = 2.5V ±0.1 ±0.8 ±1 ±1.2 µA max A Input Offset Current Drift — ±5 ±5 nA/ °C max B INPUT Least Positive Input Voltage(5) −0.5 −0.4 −0.3 −0.2 V max A Most Positive Input Voltage(5) 3.2 3.1 3.0 2.9 V min A Common-Mode Rejection Ratio (CMRR) Input-Referred 80 76 74 72 dB min A Input Impedance Differential-Mode 10 2.1 k Ω pF typ C Common-Mode 400 1.2 k Ω pF typ C OUTPUT Least Positive Output Voltage G = +5, RL = 1kΩ to 2.5V 0.09 0.11 0.12 0.13 V max A G = +5, RL = 150Ω to 2.5V 0.21 0.24 0.25 0.26 V max A Most Positive Output Voltage G = +5, RL = 1kΩ to 2.5V 4.91 4.89 4.88 4.87 V min A G = +5, RL = 150Ω to 2.5V 4.78 4.75 4.73 4.72 V min A Current Output, Sourcing and Sinking ±80 ±60 ±55 ±52 mA min A Short-Circuit Output Current Output Shorted to Either Supply 140 mA typ C Closed-Loop Output Impedance G = +2, f ≤ 100kHz 0.06 Ω typ C POWER SUPPLY Minimum Operating Voltage +2.8 V typ C Maximum Operating Voltage +11 +11 +11 V max A Maximum Quiescent Current VS = +5V 3.9 4.1 4.8 5.5 mA max A Minimum Quiescent Current VS = +5V 3.9 3.7 3.4 3.1 mA min A Power-Supply Rejection Ratio (PSRR) Input-Referred 66 61 60 59 dB min A THERMAL CHARACTERISTICS Specification: ID, IDBV −40 to +85 °C typ C Thermal Resistance, qJA D SO-8 125 °C/W typ C DBV SOT23-5 150 °C/W typ C (1) Junction temperature = ambient for +25 °C specifications. (2) Junction temperature = ambient at low temperature limits; junction temperature = ambient +5 °C at high temperature limit for over temperature. (3) Test levels: (A) 100% tested at +25 °C. Over temperature limits by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only for information. (4) Current considered positive out of pin. (5) Tested < 3dB below minimum specified CMRR at ± CMIR limits. |
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