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LMH6643MM Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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LMH6643MM Datasheet(HTML) 3 Page - National Semiconductor (TI) |
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3 / 33 page  LMH6642, LMH6643, LMH6644 www.ti.com SNOS966P – MAY 2001 – REVISED MARCH 2013 Operating Ratings (1) Supply Voltage (V+ – V−) 2.7V to 12.8V Junction Temperature Range (2) −40°C to +85°C Package Thermal Resistance (2) ( θJA) 5-Pin SOT-23 265°C/W 8-Pin SOIC 190°C/W 8-Pin VSSOP 235°C/W 14-Pin SOIC 145°C/W 14- Pin TSSOP 155°C/W (1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics. (2) The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board. 3V Electrical Characteristics Unless otherwise specified, all limits guaranteed for at TJ = 25°C, V + = 3V, V− = 0V, V CM = VO = V +/2, V ID (input differential voltage) as noted (where applicable) and RL = 2kΩ to V +/2. Boldface limits apply at the temperature extremes. Symbol Parameter Conditions Min Typ Max Units (1) (2) (1) BW −3dB BW AV = +1, VOUT = 200mVPP 80 115 MHz AV = +2, −1, VOUT = 200mVPP 46 BW0.1dB 0.1dB Gain Flatness AV = +2, RL = 150Ω to V+/2, 19 MHz RL = 402Ω, VOUT = 200mVPP PBW Full Power Bandwidth AV = +1, −1dB, VOUT = 1VPP 40 MHz en Input-Referred Voltage Noise f = 100kHz 17 nV/ √Hz f = 1kHz 48 in Input-Referred Current Noise f = 100kHz 0.90 pA/ √Hz f = 1kHz 3.3 THD Total Harmonic Distortion f = 5MHz, VO = 2VPP, AV = −1, −48 dBc RL = 100Ω to V +/2 DG Differential Gain VCM = 1V, NTSC, AV = +2 0.17 RL =150Ω to V +/2 % RL =1kΩ to V +/2 0.03 DP Differential Phase VCM = 1V, NTSC, AV = +2 0.05 RL =150Ω to V +/2 deg RL =1kΩ to V +/2 0.03 CT Rej. Cross-Talk Rejection f = 5MHz, Receiver: 47 dB Rf = Rg = 510Ω, AV = +2 TS Settling Time VO = 2VPP, ±0.1%, 8pF Load, 68 ns VS = 5V SR Slew Rate (3) AV = −1, VI = 2VPP 90 120 V/µs VOS Input Offset Voltage For LMH6642 and LMH6644 ±1 ±5 ±7 mV For LMH6643 ±1 ±3.4 ±7 TC VOS Input Offset Average Drift See (4) ±5 µV/°C IB Input Bias Current See (5) −1.50 −2.60 µA −3.25 IOS Input Offset Current 20 800 nA 1000 RIN Common Mode Input Resistance 3 M Ω (1) All limits are guaranteed by testing or statistical analysis. (2) Typical values represent the most likely parametric norm. (3) Slew rate is the average of the rising and falling slew rates. (4) Offset voltage average drift determined by dividing the change in VOS at temperature extremes by the total temperature change. (5) Positive current corresponds to current flowing into the device. Copyright © 2001–2013, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: LMH6642 LMH6643 LMH6644 |
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