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L6747A Datasheet(PDF) 10 Page - STMicroelectronics

Part # L6747A
Description  High current MOSFET driver
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

L6747A Datasheet(HTML) 10 Page - STMicroelectronics

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Device description and operation
L6747A
10/15
Doc ID 17126 Rev 1
The bootstrap capacitor value should be selected to obtain a negligible discharge due to the
turning on of the high-side MOSFET. It must provide a stable voltage supply to the high-side
driver during the MOSFET turn-on, and minimize the power dissipated by the embedded
boot diode. Figure 5 illustrates some guidelines on how to select the capacitance value for
the bootstrap according to the desired discharge, and the selected MOSFET.
To prevent the bootstrap capacitor from overcharging as a consequence of large negative
spikes, an external series RBOOT resistor (in the range of few ohms) may be required in
series with the BOOT pin.
Figure 5.
Bootstrap capacitance design
4.4
Power dissipation
The L6747A embeds high current drivers for both high-side and low-side MOSFETs. It is
therefore important to consider the power that the device is going to dissipate in driving
them in order to avoid exceeding the maximum junction operating temperature.
Two main factors contribute to device power dissipation: bias power and driver power.
Device power (PDC) depends on the static consumption of the device through the
supply pins and is easily quantifiable as follows:
Driver power is the power needed by the driver to continuously switch the external
MOSFETs ON and OFF. It is a function of the switching frequency and total gate
charge of the selected MOSFETs. It can be quantified considering that the total power
PSW dissipated to switch the MOSFETs is influenced by three main factors: external
gate resistance (when present), intrinsic MOSFET resistance, and intrinsic driver
resistance. This last factor is the important one to be determined to calculate the device
power dissipation.
The total power dissipated to switch the MOSFETs is:
When designing an application based on the L6747A, it is recommended to take into
consideration the effect of external gate resistors on the power dissipated by the driver.
External gate resistors help the device to dissipate the switching power since the same
power PSW is shared between the internal driver impedance and the external resistor,
resulting in a general cooling of the device.
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CC
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CC
V
PVCC
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PVCC
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=
P
SW
F
SW
Q
GHS
PVCC
Q
GLS
VCC
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