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RMLV0416E Datasheet(PDF) 6 Page - Renesas Technology Corp

Part No. RMLV0416E
Description  4Mb Advanced LPSRAM
Download  15 Pages
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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RMLV0416E Datasheet(HTML) 6 Page - Renesas Technology Corp

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RMLV0416E Series
R10DS0205EJ0100 Rev.1.00
Page 6 of 13
2014.2.27
Write Cycle
Parameter
Symbol
Min.
Max.
Unit
Note
Write cycle time
tWC
45
ns
Address valid to write end
tAW
35
ns
Chip select to write end
tCW
35
ns
Write pulse width
tWP
35
ns
10
LB#,UB# valid to write end
tBW
35
ns
Address setup time to write start
tAS
0
ns
Write recovery time from write end
tWR
0
ns
Data to write time overlap
tDW
25
ns
Data hold from write end
tDH
0
ns
Output enable from write end
tOW
5
ns
11
Output disable to output in high-Z
tOHZ
0
18
ns
11,12
Write to output in high-Z
tWHZ
0
18
ns
11,12
Note 10. tWP is the interval between write start and write end.
A write starts when all of (CS1#), (CS2), (WE#) and (one or both of LB# and UB#) become active.
A write is performed during the overlap of a low CS1#, a high CS2, a low WE# and a low LB# or a low UB#.
A write ends when any of (CS1#), (CS2), (WE#) or (one or both of LB# and UB#) becomes inactive.
11. This parameter is sampled and not 100% tested.
12. tOHZ and tWHZ are defined as the time when the I/O pins enter a high-impedance state and are not referred to
the I/O levels.


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