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RMLV0416E Datasheet(PDF) 5 Page - Renesas Technology Corp

Part No. RMLV0416E
Description  4Mb Advanced LPSRAM
Download  15 Pages
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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RMLV0416E Datasheet(HTML) 5 Page - Renesas Technology Corp

 
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RMLV0416E Series
R10DS0205EJ0100 Rev.1.00
Page 5 of 13
2014.2.27
AC Characteristics
Test Conditions (Vcc = 2.7V ~ 3.6V, Ta = -40 ~ +85°C)
 Input pulse levels: VIL = 0.4V, VIH = 2.4V
 Input rise and fall time: 5ns
 Input and output timing reference level: 1.4V
 Output load: See figures (Including scope and jig)
Read Cycle
Parameter
Symbol
Min.
Max.
Unit
Note
Read cycle time
tRC
45
ns
Address access time
tAA
45
ns
Chip select access time
tACS1
45
ns
tACS2
45
ns
Output enable to output valid
tOE
22
ns
Output hold from address change
tOH
10
ns
LB#, UB# access time
tBA
45
ns
Chip select to output in low-Z
tCLZ1
10
ns
7,8
tCLZ2
10
ns
7,8
LB#, UB# enable to low-Z
tBLZ
5
ns
7,8
Output enable to output in low-Z
tOLZ
5
ns
7,8
Chip deselect to output in high-Z
tCHZ1
0
18
ns
7,8,9
tCHZ2
0
18
ns
7,8,9
LB#, UB# disable to high-Z
tBHZ
0
18
ns
7,8,9
Output disable to output in high-Z
tOHZ
0
18
ns
7,8,9
Note
7. This parameter is sampled and not 100% tested.
8. At any given temperature and voltage condition, tCHZ1 max is less than tCLZ1 min, tCHZ2 max is less than tCLZ2
min, tBHZ max is less than tBLZ min, and tOHZ max is less than tOLZ min, for any device.
9. tCHZ1, tCHZ2, tBHZ and tOHZ are defined as the time when the I/O pins enter a high-impedance state and are not
referred to the I/O levels.
I/O
1.4V
RL = 500 ohm
CL = 30 pF


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