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RJL5032DPPM0 Datasheet(PDF) 3 Page - Renesas Technology Corp |
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RJL5032DPPM0 Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 7 page RJL5032DPP-M0 Preliminary R07DS0251EJ0200 Rev.2.00 Page 3 of 6 Mar 06, 2014 Main Characteristics 0.1 10 1 100 0246 10 8 6 5 4 3 2 1 0 5 4 3 2 1 0 04 8 12 16 20 Drain to Source Voltage VDS (V) Typical Output Characteristics Gate to Source Voltage VGS (V) Typical Transfer Characteristics 0.1 1 10 1 10 0.1 Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current (Typical) VGS = 10 V Ta = 25 °C Pulse Test −25 0 25 50 75 100 125 150 Case Temperature Tc ( °C) Static Drain to Source on State Resistance vs. Temperature (Typical) 6 2 4 0 8 VDS = 10 V Pulse Test Tc = −25°C 25 °C 75 °C Ta = 25 °C Pulse Test 5 V 6 V 20 V 10 V 4.2 V 4.4 V 4.6 V 4.8 V VGS = 4 V ID = 3 A 1000 100 10 Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time (Typical) VGS = 10 V Pulse Test Drain to Source Voltage VDS (V) Maximum Safe Operation Area 1.5 A 1 A di / dt = 100 A / μs VGS = 0, Ta = 25°C 0.001 0.01 0.1 1 10 100 1 10 100 1000 Tc = 25 °C 1 shot Operation in this area is limited by RDS(on) 10 μs PW = 100 μs |
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