2SC2625L-T3P-T datasheet(2/3 Pages) UTC

Part #	2SC2625L-T3P-T

Description	HIGH VOLTAGE HIGH SPEED SWITCHING

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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2 / 3 page

2SC2625

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R214-009,B

ABSOLUTE MAXIMUM RATINGS (TC=25℃)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector Base Voltage

VCBO

450

V

VCEO

400

V

Collector Emitter Voltage

VCEO(SUS)

400

V

Emitter Base Voltage

VEBO

7

V

Collector Current

IC

10

A

Base Current

IB

3

A

Power Dissipation

PD

80

W

Junction Temperature

TJ

+150

℃

Storage Temperature

TSTG

-40 ~ +150

℃

ELECTRICAL SPECIFICATIONS (TC =25℃, Unless Otherwise Specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Base Voltage

VCBO

ICBO=1mA

450

V

VCEO

ICEO=10mA

400

V

Collector Emitter Voltage

VCEO (SUS) IC=1A

400

V

Emitter Base Voltage

VEBO

IEBO=0.1mA

7

V

Collector-Emitter Saturation Voltage

VCE (Sat)

1.2

V

Base Emitter Saturation Voltage

VBE (Sat)

IC=4A, IB=0.8A

1.5

V

Collector Cut-off Current

ICBO

VCBO=450V

1.0

mA

Emitter Cut-off Current

IEBO

VEBO=7V

0.1

mA

DC Current Gain

hFE

IC=4A, VCE=5V

10

tON

1.0

µs

tSTG

2.0

µs

Switching Time

tF

IC=7.5A, IB1=-IB2=1.5A

RL=20Ω, Pw=20µs, Duty ≤ 2%

1.0

µs

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Thermal Resistance Junction to Case

θJC

1.55

℃

/W

SWITCHING TIME TEST CIRCUIT

RL=20Ω

IB1

IB2

IC

IB1

IB2

IC

0.9IC

0.1IC

ton

tstg

tf

PW=20μs

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