STFI31N65M5 datasheet(3/25 Pages) STMICROELECTRONICS

Part #	STFI31N65M5

Description	N-channel 650 V, 0.124 typ., 22 A MDmesh V Power MOSFET in D2PAK, TO-220FP, I2PakFP, TO-220 and TO-247 packages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STB31N65M5, STF31N65M5, STFI31N65M5, STP31N65M5, STW31N65M5

Electrical ratings

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

D2PAK

TO-220

TO-247

TO-220FP

I2PakFP

V

GS

Gate-source voltage

± 25

V

I

D

Drain current (continuous) at T

C

= 25 °C

22

(1)

1.

Limited by maximum junction temperature.

A

I

D

Drain current (continuous) at T

C

= 100 °C

13.9

(1)

A

I

DM

(1)

Drain current (pulsed)

88

(1)

A

P

TOT

Total dissipation at T

C

= 25 °C

150

30

W

dv/dt

(2)

2.

I

SD

≤ 22 A, di/dt ≤ 400 A/μs; V

DS

peak < V

(BR)DSS

, V

DD

=400 V

Peak diode recovery voltage slope

15

V/ns

dv/dt

(3)

3.

V

DS ≤

480 V

MOSFET dv/dt ruggedness

50

V/ns

V

ISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t = 1 s; TC = 25 °C)

2500

V

T

stg

Storage temperature

- 55 to 150

°C

T

j

Max. operating junction temperature

150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

D2PAK

TO-220FP

I2PakFP

TO-220

TO-247

R

thj-case

Thermal resistance junction-

case max

0.83

4.17

0.83

°C/W

R

thj-pcb

(1)

1.

When mounted on 1 inch² FR-4, 2 Oz copper board.

Thermal resistance junction-

pcb max

30

°C/W

R

thj-amb

Thermal resistance junction-

ambient max

62.5

50

°C/W

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