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CMPT3646 Datasheet(PDF) 1 Page - Central Semiconductor Corp

Part No. CMPT3646
Description  NPN SILICON TRANSISTOR
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Maker  CENTRAL [Central Semiconductor Corp]
Homepage  http://www.centralsemi.com
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CMPT3646 Datasheet(HTML) 1 Page - Central Semiconductor Corp

   
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Central
Central
Central
Central
Central
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
TM
170
MAXIMUM RATINGS (TA=25
oC)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCES
40
V
Collector-Emitter Voltage
VCEO
15
V
Emitter-Base Voltage
VEBO
5.0
V
Collector Current
IC
200
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
oC
Thermal Resistance
ΘJA
357
oC/W
ELECTRICAL CHARACTERISTICS (TA=25
oC unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICES
VCE=20V
0.5
µA
ICES
VCE=20V, TA=65
oC
3.0
µA
BVCBO
IC=100µA
40
V
BVCES
IC=10µA
40
V
BVCEO
IC=10mA
15
V
BVEBO
IE=100µA
5.0
V
VCE(SAT)
IC=30mA, IB=3.0mA
0.20
V
VCE(SAT)
IC=30mA, IB=3.0mA, TA=65
oC
0.30
V
VCE(SAT)
IC=100mA, IB=10mA
0.28
V
VCE(SAT)
IC=300mA, IB=30mA
0.50
V
VBE(SAT)
IC=30mA, IB=3.0mA
0.75
0.95
V
VBE(SAT)
IC=100mA, IB=10mA
1.20
V
VBE(SAT)
IC=300mA, IB=30mA
1.70
V
hFE
VCE=0.4V, IC=30mA
30
120
hFE
VCE=0.5V, IC=100mA
25
SOT-23 CASE
CMPT3646
NPN SILICON TRANSISTOR
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPT3646 type is an NPN Silicon Transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for high current, ultra high speed
switching applications.
Marking code is C2R.


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