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RV3C001ZP Datasheet(PDF) 1 Page - Rohm |
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RV3C001ZP Datasheet(HTML) 1 Page - Rohm |
1 / 11 page TENTATIVE Data Sheet www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. RV3C001ZP Pch -20V -100mA Small Signal MOSFET Low voltage drive ( -1.2V) makes this device ideal for partable equipment. Drive circuits can be simple. Built-in ESD Protection Diode. lAbsolute maximum ratings(T a = 25°C) 2) 3) 4) Junction temperature Tj 150 °C Range of storage temperature Tstg -55 to +150 °C Power dissipation Gate - Source voltage VGSS 10 V PD *3 100 mW Continuous drain current ID *1 100 mA Pulsed drain current ID,pulse *2 400 mA Drain - Source voltage VDSS -20 V Taping code T2L Marking RX Parameter Symbol Value Unit lPackaging specifications Type Packaging Taping lApplication Reel size (mm) 180 Switching Tape width (mm) 8 Basic ordering unit (pcs) 8,000 lFeatures lInner circuit lOutline VDSS -20V VML0604 RDS(on) (Max.) 3.8 W ID -100mA PD 100mW 1) Ultra Small Package (0.6×0.4×0.36mm) °C/W lThermal resistance Parameter Symbol Values Unit Min. Typ. Max. Thermal resistance, junction - ambient RthJA *3 - - 1250 *1 BODY DIODE *2 ESD PROTECTION DIODE (1) Gate (2) Source (3) Drain 1/10 2014.03 - Rev.A |
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