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TIP110 Datasheet(PDF) 2 Page - Motorola, Inc

Part No. TIP110
Description  DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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TIP110 Datasheet(HTML) 2 Page - Motorola, Inc

   
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TIP110 TIP111 TIP112 TIP115 TIP116 TIP117
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 30 mAdc, IB = 0)
TIP110, TIP115
TIP111, TIP116
TIP112, TIP117
VCEO(sus)
60
80
100
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
TIP110, TIP115
(VCE = 40 Vdc, IB = 0)
TIP111, TIP116
(VCE = 50 Vdc, IB = 0)
TIP112 ,TIP117
ICEO
2.0
2.0
2.0
mAdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
TIP110, TIP115
(VCB = 80 Vdc, IE = 0)
TIP111, TIP116
(VCB = 100 Vdc, IE = 0)
TIP112, TIP117
ICBO
1.0
1.0
1.0
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
2.0
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc)
(IC = 2.0 Adc, VCE = 4.0 Vdc)
hFE
1000
500
Collector–Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 8.0 mAdc)
VCE(sat)
2.5
Vdc
Base–Emitter On Voltage
(IC = 2.0 Adc, VCE = 4.0 Vdc)
VBE(on)
2.8
Vdc
DYNAMIC CHARACTERISTICS
Small–Signal Current Gain
(IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz)
hfe
25
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
TIP115, TIP116, TIP117
TIP110, TIP111, TIP112
Cob
200
100
pF
(1) Pulse Test: Pulse Width
v 300 µs, Duty Cycle v 2%.
Figure 2. Switching Times Test Circuit
4.0
0.04
Figure 3. Switching Times
IC, COLLECTOR CURRENT (AMP)
2.0
1.0
0.8
0.2
0.06
0.1
0.2
0.4
0.6
1.0
2.0
4.0
0.6
PNP
NPN
tf
tr
ts
td @ VBE(off) = 0
V2
approx
+ 8.0 V
V1
approx
–12 V
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
25
µs
0
RB
51
D1
+ 4.0 V
VCC
– 30 V
RC
TUT
≈ 8.0 k
≈ 60
SCOPE
for td and tr, D1 is disconnected
and V2 = 0, RB and RC are varied
to obtain desired test currents.
For NPN test circuit, reverse diode,
polarities and input pulses.
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
VCC = 30 V
IC/IB = 250
0.4
IB1 = IB2
TJ = 25°C


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