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CMPDM7002A Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CMPDM7002A Datasheet(HTML) 1 Page - Central Semiconductor Corp |
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1 / 2 page  CMPDM7002A N-CHANNEL ENHANCEMENT-MODE SURFACE MOUNT MOSFET SOT-23 CASE Central Semiconductor Corp. TM DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM7002A is special version of the 2N7002 Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This special device offers low rDS(ON) and low VDS (ON). Marking Code is C702A. MAXIMUM RATINGS (TA=25°C) SYMBOL UNITS Drain-Source Voltage VDS 60 V Drain-Gate Voltage VDG 60 V Gate-Source Voltage VGS 40 V Continuous Drain Current ID 280 mA Continuous Source Current (Body Diode) IS 280 mA Maximum Pulsed Drain Current IDM 1.5 A Maximum Pulsed Source Current ISM 1.5 A Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ,Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS IGSSF VGS=20V, VDS=0V 100 nA IGSSR VGS=20V, VDS=0V 100 nA IDSS VDS=60V, VGS=0V 1.0 µA IDSS VDS=60V, VGS=0V, Tj=125°C 500 µA ID(ON) VGS=10V, VDS ≥ 2VDS(ON) 500 mA BVDSS VGS=0V, ID=10µA 60 V VGS(th) VDS=VGS, ID=250µA 1.0 2.5 V VDS(ON) VGS=10V, ID=500mA 1.0 V VDS(ON) VGS=5.0V, ID=50mA 0.15 V rDS(ON) VGS=10V, ID=500mA 2.0 Ω rDS(ON) VGS=10V, ID=500mA, Tj=125°C 3.5 Ω rDS(ON) VGS=5.0V, ID=50mA 3.0 Ω rDS(ON) VGS=5.0V, ID=50mA, Tj=125°C 5.0 Ω gFS VDS ≥ 2VDS(ON), ID=200mA 80 mmhos Crss VDS=25V, VGS=0, f=1.0MHz 5.0 pF Ciss VDS=25V, VGS=0, f=1.0MHz 50 pF Coss VDS=25V, VGS=0, f=1.0MHz 25 pF ton VDD=30V, VGS=10V, ID=200mA, 20 ns toff RG=25Ω, RL=150Ω 20 ns VSD VGS=0V, IS=400mA 1.2 V R0 ( 05-December 2001) |
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