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TIP100 Datasheet(PDF) 2 Page - Motorola, Inc

Part No. TIP100
Description  DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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TIP100 Datasheet(HTML) 2 Page - Motorola, Inc

   
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TIP100 TIP101 TIP102 TIP105 TIP106 TIP107
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 30 mAdc, IB = 0)
TIP100, TIP105
TIP101, TIP106
TIP102, TIP107
VCEO(sus)
60
80
100
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
TIP100, TIP105
(VCE = 40 Vdc, IB = 0)
TIP101, TIP106
(VCE = 50 Vdc, IB = 0)
TIP102, TIP107
ICEO
50
50
50
µAdc
Collector Cuttoff Current
(VCB = 60 Vdc, IE = 0)
TIP100, TIP105
(VCB = 80 Vdc, IE = 0)
TIP101, TIP106
(VCB = 100 Vdc, IE = 0)
TIP102, TIP107
ICBO
50
50
50
µAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
8.0
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 3.0 Adc, VCE = 4.0 Vdc)
(IC = 8.0 Adc, VCE = 4.0 Vdc)
hFE
1000
200
20,000
Collector–Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 6.0 mAdc)
(IC = 8.0 Adc, IB = 80 mAdc)
VCE(sat)
2.0
2.5
Vdc
Base–Emitter On Voltage
(IC = 8.0 Adc, VCE = 4.0 Vdc)
VBE(on)
2.8
Vdc
DYNAMIC CHARACTERISTICS
Small–Signal Current Gain
(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
hfe
4.0
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
TIP105, TIP106, TIP107
TIP100, TIP101, TIP102
Cob
300
200
pF
(1) Pulse Test: Pulse Width
v 300 µs, Duty Cycle v 2%.
Figure 2. Switching Times Test Circuit
5.0
0.1
Figure 3. Switching Times
IC, COLLECTOR CURRENT (AMP)
2.0
1.0
0.5
0.05
0.2
0.3
0.5 0.7 1.0
2.0
3.0
10
0.3
0.7
PNP
NPN
tf
tr
ts
td @ VBE(off) = 0 V
V2
approx
+ 8.0 V
V1
approx
–12 V
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
25
µs
0
RB
51
D1
+ 4.0 V
VCC
– 30 V
RC
TUT
≈ 8.0 k ≈ 120
SCOPE
for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse all polarities.
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
3.0
0.2
0.1
0.07
5.0 7.0


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