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EKV550 Datasheet(PDF) 2 Page - Sanken electric |
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EKV550 Datasheet(HTML) 2 Page - Sanken electric |
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2 / 9 page  50V N-ch MOSFET EKV550 January. 2006 . Sanken Electric Co.,Ltd. T02-005JA-060111 Electrical characteristics (Ta=25°C） Limits Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Drain to Source breakdown Voltage V(BR)DSS ID=100μA,VGS=0V 250 V Gate to Source Leakage Current IGSS VGS=±20V ±10 μA Drain to Source Leakage Current IDSS VDS=50V, VGS=0V 100 μA Gate Threshold Voltage VTH VDS=10V, ID=250μA 3.0 4.2 V Forward Transconductance Re(Yfs) VDS=10V, ID=25A 17 S Static Drain to Source On-Resistance RDS(on) ID=25A, VGS=10V 12 15 mΩ Input Capacitance Ciss 2000 Output Capacitance Coss 1200 Reverse Transfer Capacitance Crss VDS=10V VGS=0V f=1MHz 500 pF Turn-On Delay Time td(on) 30 Rise Time tr 360 Turn-Off Delay Time td(off) 130 Fall Time tf ID=25A, VDD≈25V RL=1Ω, VGS=10V RG=10Ω See Fig.2 120 ns Source-Drain Diode Forward Voltage VSD ISD=50A,VGS=0V 1.0 1.5 V 2/9 |
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