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EKI06108 Datasheet(PDF) 2 Page - Sanken electric |
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EKI06108 Datasheet(HTML) 2 Page - Sanken electric |
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2 / 6 page  EKI06108 EKI06108-DS Rev.1.2 SANKEN ELECTRIC CO.,LTD. 2 Jan. 24, 2014 Thermal Characteristics Unless otherwise specified, T A = 25 °C Parameter Symbol Test Conditions Min. Typ. Max. Unit Thermal Resistance (Junction to Case) RθJC − − 1.4 °C/W Thermal Resistance (Junction to Ambient) RθJA − − 62.5 °C/W Electrical Characteristics Unless otherwise specified, T A = 25 °C Parameter Symbol Test Conditions Min. Typ. Max. Unit Drain to Source Breakdown Voltage V(BR)DSS ID = 100 μA, VGS = 0 V 60 − − V Drain to Source Leakage Current IDSS VDS = 60 V, VGS = 0 V − − 100 µA Gate to Source Leakage Current IGSS VGS = ± 20 V − − ± 100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 650 µA 1.0 2.0 2.5 V Static Drain to Source On-Resistance RDS(ON) ID = 28.5 A, VGS = 10 V − 7.0 9.2 mΩ ID = 14.3 A, VGS = 4.5 V − 8.6 11.2 mΩ Gate Resistance RG f = 1 MHz − 1.5 − Ω Input Capacitance Ciss VDS = 25 V VGS = 0 V f = 1 MHz − 2520 − pF Output Capacitance Coss − 280 − Reverse Transfer Capacitance Crss − 135 − Total Gate Charge (VGS = 10 V) Qg1 VDS = 30 V ID = 28.5 A − 36.2 − nC Total Gate Charge (VGS = 4.5 V) Qg2 − 16.9 − Gate to Source Charge Qgs − 6.1 − Gate to Drain Charge Qgd − 5.4 − Turn-On Delay Time td(on) VDD = 30 V ID = 28.5 A VGS = 10 V, RG = 4.7 Ω Refer to Figure 2 − 4.5 − ns Rise Time tr − 5.0 − Turn-Off Delay Time td(off) − 21.6 − Fall Time tf − 10.7 − Source to Drain Diode Forward Voltage VSD IS = 28.5 A, VGS = 0 V − 0.9 1.5 V Source to Drain Diode Reverse Recovery Time trr IF = 28.5 A di/dt = 100 A/µs Refer to Figure 3 − 34.8 − ns Source to Drain Diode Reverse Recovery Charge Q rr − 42.3 − nC |
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