EMB75 datasheet(2/6 Pages) ROHM

Part #	EMB75

Description	Complex Digital Transistors (Bias Resistor Built-in Transistors)

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Manufacturer	ROHM [Rohm]

Direct Link	http://www.rohm.com

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2 / 6 page

EMB75

Datasheet

l

lAbsolute maximum ratings (Ta = 25°C)

Parameter

Symbol

Values

Unit

Supply voltage

VCC

-50

V

Input voltage

VIN

-30 to 5

V

Output current

IO

-100

mA

Collector current

IC(MAX)*1

-100

mA

Power dissipation

PD*2 *3

150(Total)

mW

Junction temperature

Tj

150

℃

Range of storage temperature

Tstg

-55 to +150

℃

l

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

Input voltage

VI(off)

VCC = -5V, IO = -0.1mA

-

-0.5

V

VI(on)

VO = -0.3V, IO = -5mA

-1.1

-

Output voltage

VO(on)

IO / II = -5mA / -0.5mA

-

-0.07

-0.15

V

Input current

II

VI = -5V

-

-1.8

mA

Output current

IO(off)

VCC = -50V, VI = 0V

-

-0.5

μA

DC current gain

GI

VO = -10V, IO = -5mA

80

-

Input resistance

R1

-

3.29

4.7

6.11

kΩ

Resistance ratio

R2/R1

-

8

10

12

-

Transition frequency

fT*1

VCE = -10V, IE = 5mA,

f = 100MHz

-

250

-

MHz

*1 Characteristics of built-in transistor.

*2 terminal mounted on a reference footprint.

*3 120mW per element must not be exceeded.

www.rohm.com

2/5

20131001 - Rev.003

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