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BZV55C2V4 Datasheet(PDF) 1 Page - Central Semiconductor Corp

Part No. BZV55C2V4
Description  SURFACE MOUNT SILICON ZENER DIODE 0.5 WATT, 2.4 THRU 75 VOLTS ± 5ANCE
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Maker  CENTRAL [Central Semiconductor Corp]
Homepage  http://www.centralsemi.com
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BZV55C2V4 Datasheet(HTML) 1 Page - Central Semiconductor Corp

   
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BZV55C2V4
THRU
BZV55C75
SURFACE MOUNT
SILICON ZENER DIODE
0.5 WATT, 2.4 THRU 75 VOLTS
± 5% TOLERANCE
SOD-80 CASE
Central
Semiconductor Corp.
TM
R0 ( 13-November 2001)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BZV55C2V4
Series Surface Mount Silicon Zener Diode is a
high quality, well constructed, highly reliable
component designed for use in all types of
commercial, industrial, entertainment, computer,
and automotive applications.
ZENER
TEST
MAXIMUM ZENER
MAXIMUM
MAXIMUM
TYPE NO.
VOLTAGE
CURRENT
IMPEDANCE
REVERSE
ZENER
CURRENT
CURRENT
VZ @ IZT
MIN
NOM
MAX
IZT
ZZT@IZT ZZK @ IZK
IR @ VR
IZM
VOLTS VOLTS VOLTS
mA
ΩΩ
mA
µA
VOLTS
mA
BZV55C2V4
2.280
2.4
2.520
5.0
100
600
1.0
50
1.0
208
BZV55C2V7
2.565
2.7
2.835
5.0
100
600
1.0
20
1.0
185
BZV55C3V0
2.850
3.0
3.150
5.0
95
600
1.0
10
1.0
167
BZV55C3V3
3.135
3.3
3.465
5.0
95
600
1.0
5.0
1.0
152
BZV55C3V6
3.420
3.6
3.780
5.0
90
600
1.0
5.0
1.0
139
BZV55C3V9
3.705
3.9
4.095
5.0
90
600
1.0
3.0
1.0
128
BZV55C4V3
4.085
4.3
4.515
5.0
90
600
1.0
3.0
1.0
116
BZV55C4V7
4.465
4.7
4.935
5.0
80
500
1.0
3.0
2.0
106
BZV55C5V1
4.845
5.1
5.355
5.0
60
480
1.0
2.0
2.0
96
BZV55C5V6
5.320
5.6
5.880
5.0
40
400
1.0
1.0
2.0
89
BZV55C6V2
5.890
6.2
6.510
5.0
10
150
1.0
3.0
4.0
81
BZV55C6V8
6.460
6.8
7.140
5.0
15
80
1.0
2.0
4.0
74
BZV55C7V5
7.125
7.5
7.875
5.0
15
80
1.0
1.0
5.0
67
BZV55C8V2
7.790
8.2
8.610
5.0
15
80
1.0
0.7
5.0
61
BZV55C9V1
8.645
9.1
9.555
5.0
15
100
1.0
0.5
6.0
55
BZV55C10
9.500
10
10.50
5.0
20
150
1.0
0.1
7.0
50
BZV55C11
10.45
11
11.55
5.0
20
150
1.0
0.1
8.0
45
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
UNITS
Average Forward Current
IO
250
mA
Peak Repetitive Forward Current
IFRM
250
mA
Power Dissipation (TL=50°C)
PD
500
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +200
°C
ELECTRICAL CHARACTERISTICS: (TA=25°C), VF=0.9V MAX @ IF=10mA FOR ALL TYPES.


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