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BD10IC0MEFJ-LBH2 Datasheet(PDF) 19 Page - Rohm

Part No. BD10IC0MEFJ-LBH2
Description  1.0A Variable Output Industrial LDO Regulator
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Maker  ROHM [Rohm]
Homepage  http://www.rohm.com
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BD10IC0MEFJ-LBH2 Datasheet(HTML) 19 Page - Rohm

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BDxxIC0MEFJ-LB
Datasheet
TSZ02201-0R6R0AZ00590-1-2
© 2013 ROHM Co., Ltd. All rights reserved.
www.rohm.com
TSZ22111・15・001
21.Feb.2014 Rev.002
(11). Regarding input pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated.
P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic
diode or transistor. For example, the relation between each potential is as follows:
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes can occur inevitable in the structure of the IC.
The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical
damage. Accordingly, methods by which parasitic diodes operate, such as applying a voltage that is lower than the
GND(P substrate) voltage to an input pin, should not be used.
(12). Ground Wiring Pattern.
When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns,
placing a single ground point at the ground potential of application so that the pattern wiring resistance and voltage
variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to
change the GND wiring pattern of any external components, either.
Resistor
Transistor (NPN)
N
N
N
P
+
P
+
P
P substrate
GND
Pin A
N
N
P
+
P
+
P
P substrate
GND
Parasitic element
Pin B
C
B
E
N
GND
Pin A
Pin B
Other adjacent elements
E
B
C
GND
Parasitic
element
Parasitic
element
Parasitic element


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