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BD10IC0MEFJ-LBH2 Datasheet(PDF) 14 Page - Rohm

Part No. BD10IC0MEFJ-LBH2
Description  1.0A Variable Output Industrial LDO Regulator
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Maker  ROHM [Rohm]
Homepage  http://www.rohm.com
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BD10IC0MEFJ-LBH2 Datasheet(HTML) 14 Page - Rohm

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BDxxIC0MEFJ-LB
Datasheet
TSZ02201-0R6R0AZ00590-1-2
© 2013 ROHM Co., Ltd. All rights reserved.
www.rohm.com
TSZ22111・15・001
21.Feb.2014 Rev.002
Power Dissipation
◎HTSOP-J8
Thermal design should allow operation within the following conditions. Note that the temperatures listed are the allowed
temperature limits, and thermal design should allow sufficient margin from the limits.
1. Ambient temperature Ta can be no higher than 105℃.
2. Chip junction temperature (Tj) can be no higher than 150℃.
Chip junction temperature can be determined as follows:
Most of the heat loss that occurs in the BDxxIC0MEFJ-LB is generated from the output Pch FET. Power loss is determined
by the total VCC-VO voltage and output current. Be sure to confirm the system input and output voltage and the output
current conditions in relation to the heat dissipation characteristics of the VCC and VO in the design. Bearing in mind that
heat dissipation may vary substantially depending on the substrate employed (due to the power package incorporated in
the BDxxIC0MEFJ-LB make certain to factor conditions such as substrate size into the thermal design.
Power consumption[W] =
Input voltage (VCC) - Output voltage (VO)
×IO(Ave)
Example) Where VCC=5.0V, VO=3.3V, IO(Ave) = 0.1A,
Power consumption[W] =
5.0V - 3.3V
×0.1A
=0.17W
Calculation based on ambient temperature (Ta)
Tj=Ta+θj-a×W
<Reference values>
1-layer substrate (copper foil density 0mm×0mm)
2-layer substrate (copper foil density 15mm×15mm)
2-layer substrate (copper foil density 70mm×70mm)
4-layer substrate (copper foil density 70mm×70mm)
Substrate size: 70mm×70mm×1.6mm (substrate with thermal via)
θj-a: HTSOP-J8 153.2℃/W
113.6℃/W
59.2℃/W
33.3℃/W
Measure condition: mounted on a ROHM board,
and IC
Substrate size: 70mm × 70mm × 1.6mm
(Substrate with thermal via)
・ Solder the substrate and package reverse
exposure heat radiation part
① IC only
θj-a=249.5℃/W
② 1-layer(copper foil are :0mm×0mm)
θj-a=153.2℃/W
③ 2-layer(copper foil are :15mm×15mm)
θj-a=113.6℃/W
④ 2-layer(copper foil are :70mm×70mm)
θj-a=59.2℃/W
⑤ 4-layer(copper foil are :70mm×70mm)
θj-a=33.3℃/W
0
25
50
75
100
125
150
0
2.0
3.0
4.0
①0.50W
周囲温度:Ta [℃]
1.0
①0.50W
②0.82W
③1.10W
④2.11W
⑤3.76W
Ambient Temperature :Ta [℃]


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