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SI4565ADY-T1-E3 Datasheet(PDF) 10 Page - Vishay Siliconix |
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SI4565ADY-T1-E3 Datasheet(HTML) 10 Page - Vishay Siliconix |
10 / 15 page www.vishay.com 10 Document Number: 73880 S09-0393-Rev. B, 09-Mar-09 Vishay Siliconix Si4565ADY P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 1 3 4 6 7 TC – Case Temperature (°C) 0 150 125 100 75 50 25 0 Power Derating, Junction-to-Foot 0.0 0.8 1.6 2.4 3.2 4.0 0 25 50 75 100 125 150 TC – Case Temperature (°C) Power Derating, Junction-to-Ambient 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 TA – Ambient Temperature (°C) |
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