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SFH601 Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SFH601
Description  Optocoupler, Phototransistor Output, with Base Connection
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SFH601 Datasheet(HTML) 2 Page - Vishay Siliconix

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Alternative Device Available, Use CNY17
SFH601
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 19-Aug-13
2
Document Number: 83663
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
OUTPUT
Collector emitter voltage
VCEO
100
V
Emitter base voltage
VEBO
7V
Collector current
IC
50
mA
t = 1.0 ms
IC
100
mA
Power dissipation
Pdiss
150
mW
COUPLER
Isolation test voltage
between emitter and detector
t = 1.0 s
VISO
5300
VRMS
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
Storage temperature range
Tstg
- 55 to + 150
°C
Ambient temperature range
Tamb
- 55 to +100
°C
Junction temperature
Tj
100
°C
Soldering temperature (1)
max. 10 s, dip soldering:
distance to seating plane
≥ 1.5 mm
Tsld
260
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 60 mA
VF
1.25
1.65
V
Breakdown voltage
IR = 10 μA
VBR
6V
Reverse current
VR = 6 V
IR
0.01
10
μA
Capacitance
VF = 0 V, f = 1 MHz
CO
25
pF
Thermal resistance
Rthja
750
K/W
OUTPUT
Collector emitter capacitance
f = 1 mHz, VCE = 5 V
CCE
6.8
pF
Collector base capacitance
f = 1 mHz, VCB = 5 V
CCB
8.5
pF
Emitter base capacitance
f = 1 mHz, VEB = 5 V
CEB
11
pF
Thermal resistance
Rthja
500
K/W
Collector emitter leakage current
VCE =10 V
SFH601-1
ICEO
250
nA
SFH601-2
ICEO
250
nA
SFH601-3
ICEO
5
100
nA
SFH601-4
ICEO
5
100
nA
COUPLER
Saturation voltage collector emitter
IF = 10 mA, IC = 2.5 mA
VCEsat
0.25
0.4
V
Capacitance (input to output)
VI-O = 0, f = 1 MHz
CIO
0.6
pF
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT


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