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SFH601 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SFH601 Datasheet(HTML) 2 Page - Vishay Siliconix |
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Alternative Device Available, Use CNY17 SFH601 www.vishay.com Vishay Semiconductors Rev. 1.5, 19-Aug-13 2 Document Number: 83663 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. OUTPUT Collector emitter voltage VCEO 100 V Emitter base voltage VEBO 7V Collector current IC 50 mA t = 1.0 ms IC 100 mA Power dissipation Pdiss 150 mW COUPLER Isolation test voltage between emitter and detector t = 1.0 s VISO 5300 VRMS Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Storage temperature range Tstg - 55 to + 150 °C Ambient temperature range Tamb - 55 to +100 °C Junction temperature Tj 100 °C Soldering temperature (1) max. 10 s, dip soldering: distance to seating plane ≥ 1.5 mm Tsld 260 °C ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 60 mA VF 1.25 1.65 V Breakdown voltage IR = 10 μA VBR 6V Reverse current VR = 6 V IR 0.01 10 μA Capacitance VF = 0 V, f = 1 MHz CO 25 pF Thermal resistance Rthja 750 K/W OUTPUT Collector emitter capacitance f = 1 mHz, VCE = 5 V CCE 6.8 pF Collector base capacitance f = 1 mHz, VCB = 5 V CCB 8.5 pF Emitter base capacitance f = 1 mHz, VEB = 5 V CEB 11 pF Thermal resistance Rthja 500 K/W Collector emitter leakage current VCE =10 V SFH601-1 ICEO 250 nA SFH601-2 ICEO 250 nA SFH601-3 ICEO 5 100 nA SFH601-4 ICEO 5 100 nA COUPLER Saturation voltage collector emitter IF = 10 mA, IC = 2.5 mA VCEsat 0.25 0.4 V Capacitance (input to output) VI-O = 0, f = 1 MHz CIO 0.6 pF ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT |
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