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KSE45H11TU Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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KSE45H11TU Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 4 page  ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted Electrical Characteristics T C=25°C unless otherwise noted * Pulse test: PW ≤300µs, Duty cycle≤2% Symbol Parameter Value Units VCEO Collector-Emitter Voltage : KSE45H 1,2 : KSE45H 4,5 : KSE45H 7,8 : KSE45H 10,11 - 30 - 45 - 60 - 80 V V V V VEBO Emitter-Base Voltage - 5 V IC Collector Current (DC) - 10 A ICP *Collector Current (Pulse) - 20 A PC Collector Dissipation (TC=25°C) 50 W PC Collector Dissipation (Ta=25°C) 1.67 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units ICES Collector Cut-off Current VCE = Rated, VCEO, VEB = 0 -10 µA IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 -100 µA hFE *DC Current Gain : KSE45H 1, 4, 7 10 : KSE45H 2, 5, 8,11 VCE = - 1V, IC = - 2A 35 60 VCE(sat) *Collector-Emitter Saturation Voltage : KSE45H 1, 4, 7 10 : KSE45H 2, 5, 8,11 IC = - 8A, IB = - 0.8A IC = - 8A, IB = - 0.4A -1 -1 V V VBE(sat) *Base-Emitter Saturation Voltage IC = - 8A, IB = - 0.8A -1.5 V fT Current Gain Bandwidth Product VCE = - 10V, IC = - 0.5A 40 MHz Cob Output Capacitance VCB = - 10V, f = 1MHz 230 pF tON Turn ON Time VCC =20V, IC = - 5A IB1 = - IB2 = - 0.5A 135 ns tSTG Storage Time 500 ns tF Fall Time 100 ns KSE45H Series General Purpose Power Switching Applications • Low Collector-Emitter Saturation Voltage: VCE(sat) = -1V (MAX)@-8A • Fast Switching Speeds • Complement to KSE44H 1.Base 2.Collector 3.Emitter 1 TO-220 |
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