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2SB858 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SB858 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 4 page SavantIC Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB857 2SB858 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SB857 -50 V(BR)CEO Collector-emitter breakdown voltage 2SB858 IC=-50mA; RBE=; -60 V V(BR)CBO Collector-base breakdown voltage IC=-10µA; IE=0 -70 V V(BR)EBO Emitter-base breakdown votage IE=-10µA; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-2 A;IB=-0.2 A -1.0 V VBE Base-emitter voltage IC=-1A ; VCE=-4V -1.0 V ICBO Collector cut-off current VCB=-50V; IE=0 -1 µA hFE-1 DC current gain IC=-1A ; VCE=-4V 60 320 hFE-2 DC current gain IC=-0.1A ; VCE=-4V 35 fT Transition frequency IC=-0.5A ; VCE=-4V 15 MHz hFE-1 classifications B C D 60-120 100-200 160-320 |
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